Intel corporation (20240113109). PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology impact the overall cost of manufacturing semiconductor devices?
- 1.11 Are there any limitations or drawbacks to using this plug technology in semiconductor devices?
- 1.12 Original Abstract Submitted
PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Leonard P. Guler of Hillsboro OR (US)
Robert Joachim of Beaverton OR (US)
Shengsi Liu of Portland OR (US)
Hongqian Sun of Sammamish WA (US)
Tahir Ghani of Portland OR (US)
PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113109 titled 'PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a patent application related to forming a plug between two gates within a transistor layer of a semiconductor device. The plug includes a cap, a liner, and a base, with the cap potentially containing metal and being even with the top of the gates.
- The plug in the transistor layer fills in for a gate cut, providing a more even surface at the top of the layer.
- The cap of the plug may be made of metal and sit at the same level as the top of the gates, ensuring a smooth transition in the transistor layer.
Potential Applications
This technology could be applied in the semiconductor industry for manufacturing advanced transistors with improved performance and reliability.
Problems Solved
1. Uneven surfaces in transistor layers due to gate cuts can be addressed by using the plug described in the patent application. 2. Ensuring a consistent and reliable connection between gates within a semiconductor device can be achieved with this innovation.
Benefits
1. Improved performance and efficiency of semiconductor devices. 2. Enhanced reliability and longevity of transistors in electronic devices.
Potential Commercial Applications
Optimizing Transistor Layer with Advanced Plug Technology
Possible Prior Art
There may be prior art related to forming plugs in semiconductor devices to improve the structure and performance of transistors. However, specific examples are not provided in this context.
Unanswered Questions
How does this technology impact the overall cost of manufacturing semiconductor devices?
The abstract does not mention the cost implications of implementing this technology. It would be essential to understand if the benefits outweigh the potential increase in production costs.
Are there any limitations or drawbacks to using this plug technology in semiconductor devices?
The abstract does not address any limitations or drawbacks associated with the described plug technology. It would be crucial to investigate any potential challenges or restrictions in practical applications.
Original Abstract Submitted
embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a plug between two gates within a transistor layer of a semiconductor device. in embodiments, the plug includes a cap at a top of the plug and a liner surrounding at least a portion of the cap, and a base below the cap and the liner. the cap may include a metal. a top of the cap may be even with, or substantially even with, the top of the two gates. the plug may provide a more even surface at a top of a transistor layer where the plug fills in for a gate cut. other embodiments may be described and/or claimed.
