18526444. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing methods for forming source/drain contacts in semiconductor devices?
- 1.11 What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?
- 1.12 Original Abstract Submitted
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Yu-Lien Huang of Hsinchu County (TW)
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18526444 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves forming a multilayer interconnection structure over a carrier substrate, depositing an interlayer dielectric layer, forming a source/drain contact, depositing a semiconductive layer, patterning the semiconductive layer to form a semiconductor fin, and forming a gate structure across the semiconductor fin.
- Formation of multilayer interconnection structure over carrier substrate
- Deposition of interlayer dielectric layer
- Formation of source/drain contact
- Deposition of semiconductive layer
- Patterning of semiconductive layer to form semiconductor fin
- Formation of gate structure across semiconductor fin
- Patterning of semiconductor fin to form first and second recesses
- Formation of first and second source/drain epitaxial structures in the recesses
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the manufacturing of advanced integrated circuits and microprocessors.
Problems Solved
This technology solves the problem of improving the performance and efficiency of semiconductor devices by optimizing the structure of source/drain contacts and epitaxial structures.
Benefits
The benefits of this technology include enhanced electrical connectivity, improved device performance, and increased reliability of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of high-performance CPUs, GPUs, and other semiconductor devices for various electronic applications.
Possible Prior Art
One possible prior art for this technology could be the use of similar methods for forming source/drain contacts and epitaxial structures in semiconductor devices.
Unanswered Questions
How does this technology compare to existing methods for forming source/drain contacts in semiconductor devices?
The article does not provide a direct comparison between this technology and existing methods for forming source/drain contacts in semiconductor devices. It would be beneficial to understand the specific advantages and disadvantages of this new method compared to traditional techniques.
What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?
The article does not address the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes. It would be important to consider factors such as scalability, cost-effectiveness, and compatibility with existing fabrication equipment.
Original Abstract Submitted
A method includes forming a first multilayer interconnection structure over a carrier substrate. A first interlayer dielectric (ILD) layer is deposited over the first multilayer interconnection structure. A first source/drain contact is formed in the first ILD layer. After forming the first source/drain contact, a semiconductive layer is formed over the first source/drain contact and the first ILD layer. The semiconductive layer is patterned to form a semiconductor fin over the first source/drain contact. A gate structure is formed across the semiconductor fin. The semiconductor fin is patterned to form a first recess and a second recess in the semiconductor fin, such that the first recess exposes the first source/drain contact. First and second source/drain epitaxial structures are respectively formed in the first and second recesses of the semiconductor fin such that the first source/drain epitaxial structure is electrically connected to the first source/drain contact.
