17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Wei-Cheng Wang of Hsinchu (TW)
Shih-Hang Chiu of Taichung City (TW)
Kuan-Ting Liu of Hsinchu City (TW)
Cheng-Lung Hung of Hsinchu City (TW)
Chi On Chui of Hsinchu City (TW)
Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors - A simplified explanation of the abstract
This abstract first appeared for US patent application 17725722 titled 'Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors
Simplified Explanation
The patent application describes a semiconductor device with a metal gate electrode and various layers on top of it.
- The device includes an active region, metal gate electrode, conductive layer, silicon-containing layer, and dielectric layer.
- The metal gate electrode is placed over the active region.
- The conductive layer is placed over the metal gate electrode.
- A first portion of the conductive layer has a silicon-containing layer on top of it.
- A second portion of the conductive layer has a dielectric layer on top of it.
- A gate via extends vertically through the silicon-containing layer.
- The gate via is positioned over the metal gate electrode and is electrically connected to it.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and production
Problems solved by this technology:
- Improved performance and functionality of semiconductor devices
- Enhanced electrical connectivity and integration of different layers
- Efficient use of space within the device structure
Benefits of this technology:
- Increased efficiency and reliability of semiconductor devices
- Enhanced electrical performance and signal transmission
- Compact design and improved integration capabilities
Original Abstract Submitted
A semiconductor device includes an active region. A metal gate electrode is disposed over the active region. A conductive layer is disposed over the metal gate electrode. A silicon-containing layer is disposed over a first portion of the conductive layer. A dielectric layer is disposed over a second portion of the conductive layer. A gate via vertically extends through the silicon-containing layer. The gate via is disposed over, and electrically coupled to, the metal gate electrode.
