18369450. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Keun Hwi Cho of Goyang-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18369450 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate, a gate structure, and a first conductive connection group. The gate structure consists of a gate spacer and a gate electrode. The first conductive connection group contains a layer of ferroelectric material. A portion of the ferroelectric material layer is positioned above the upper surface of the gate spacer, forming a ferroelectric capacitor with negative capacitance in the first conductive connection group.
- The gate structure of the semiconductor device includes a gate spacer and a gate electrode.
- The first conductive connection group incorporates a layer of ferroelectric material.
- The ferroelectric material layer is positioned above the upper surface of the gate spacer.
- The ferroelectric material layer forms a ferroelectric capacitor with negative capacitance in the first conductive connection group.
Potential Applications:
- This semiconductor device can be utilized in various electronic devices, such as smartphones, tablets, and computers.
- It can enhance the performance and efficiency of memory devices, logic circuits, and other semiconductor components.
Problems Solved:
- The incorporation of a ferroelectric material layer in the first conductive connection group allows for the formation of a ferroelectric capacitor with negative capacitance.
- This addresses the need for improved capacitance and performance in semiconductor devices.
Benefits:
- The ferroelectric capacitor with negative capacitance can enhance the overall performance and efficiency of the semiconductor device.
- It enables faster switching speeds and reduced power consumption.
- The technology provides a more compact and cost-effective solution for semiconductor devices.
Original Abstract Submitted
A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.
