17833749. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Micron Technology, Inc.)

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SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Organization Name

Micron Technology, Inc.

Inventor(s)

Takuya Imamoto of Higashihiroshima (JP)

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17833749 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes two transistors of the same conductivity type.

  • The first transistor has a first gate insulating film and a first gate structure consisting of three conductive films stacked on top of each other.
  • The second transistor also has a gate insulating film and a gate structure, but it consists of only two conductive films stacked on top of each other.
  • The gate insulating films for both transistors are the same material.
  • The second conductive film in the first transistor and the fourth conductive film in the second transistor are made of the same material.
  • Similarly, the third conductive film in the first transistor and the fifth conductive film in the second transistor are made of the same material.

Potential applications of this technology:

  • Integrated circuits: The semiconductor device can be used in the fabrication of integrated circuits, allowing for more efficient and compact designs.
  • Electronics manufacturing: The technology can be applied in the manufacturing of various electronic devices, such as smartphones, computers, and televisions.

Problems solved by this technology:

  • Simplified fabrication process: By using the same gate insulating film and the same materials for certain conductive films in both transistors, the manufacturing process can be simplified, reducing complexity and cost.
  • Improved performance: The design of the semiconductor device may lead to improved performance in terms of speed, power consumption, and reliability.

Benefits of this technology:

  • Cost-effective manufacturing: The simplified fabrication process can lead to cost savings in the production of semiconductor devices.
  • Enhanced device performance: The design improvements may result in better overall performance of electronic devices utilizing these semiconductor devices.
  • Compact and efficient designs: The technology allows for more compact and efficient designs of integrated circuits, enabling smaller and more powerful electronic devices.


Original Abstract Submitted

A semiconductor device includes a first transistor of a first conductivity type having a first gate insulating film and a first gate structure on the first gate insulating film, the first gate structure including a first conductive film, a second conductive film on the first conductive film and a third conductive film on the second conductive film; and a second transistor of the first conductivity type having a second gate insulating film and a second gate structure on the second gate insulating film, the second gate structure including a fourth conductive film and a fifth conductive film on the fourth conductive film; wherein the first gate insulating film and the second gate insulating film are the same, the second conductive film and the fourth conductive film are the same and the third conductive film and the fifth conductive film are the same.

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