17457588. INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Maruf Amin Bhuiyan of Albany NY (US)
Ardasheir Rahman of Schenectady NY (US)
Kevin W. Brew of Niskayuna NY (US)
Carl Radens of LaGrangeville NY (US)
INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17457588 titled 'INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY
Simplified Explanation
The patent application describes integrated input/output and logic devices for nanosheet technology and methods of fabrication for these devices. The devices use different types of transistors, such as Extended Gate (EG) Field Effect Transistors (FET) for input/output devices and Suspended Gate (SG) FETs for logic devices. By co-locating SG and EG devices on a single die, the fabricator can ensure alignment between the nanosheets used in the devices, improving consistency in device characteristics and reducing overall space requirements.
- Integrated input/output and logic devices for nanosheet technology
- Different types of transistors used for input/output and logic devices
- EG FETs used for input/output devices
- SG FETs used for logic devices
- Co-locating SG and EG devices on a single die
- Assures alignment between nanosheets used in the devices
- Improves consistency in device characteristics on a single die
- Reduces overall space requirements for hardware used by input/output and logic devices
Potential Applications
- Nanosheet technology in integrated circuits
- Electronic devices requiring integrated input/output and logic functionality
Problems Solved
- Inconsistency in device characteristics on a single die
- Space limitations for input/output and logic devices in nanosheet technology
Benefits
- Improved consistency in device characteristics
- Reduced space requirements for hardware
Original Abstract Submitted
Embodiments described herein provide for integrated input/output and logic devices for nanosheet technology and methods of fabrication for the devices. The types of transistors used for input/output devices and logic devices may differ such that, for example, input/output devices may use EG (Extended Gate) Field Effect Transistors (FET) while logic devices may use Suspended Gate (SG) FETs. Co-locating SG and EG devices on a single die provides for a fabricator to assure alignment between the nanosheets used in the SG and EG devices (improving consistency in the device characteristics on a single die) and reduce overall space requirements for the hardware used by input/output and logic devices.
