18151990. METHOD OF MAKING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
METHOD OF MAKING A SEMICONDUCTOR DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chi-Feng Huang of Hsinchu (TW)
Chia-Chung Chen of Hsinchu (TW)
Victor Chiang Liang of Hsinchu (TW)
METHOD OF MAKING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151990 titled 'METHOD OF MAKING A SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method of fabricating a semiconductor device with specific features and structures. Here is a simplified explanation of the abstract:
- The method involves creating a gate structure, a first edge structure, and a second edge structure on a semiconductor strip.
- A first source/drain feature is formed between the gate structure and the first edge structure, and a second source/drain feature is formed between the gate structure and the second edge structure.
- The distance between the gate structure and the first source/drain feature is different from the distance between the gate structure and the second source/drain feature.
- The method also includes implanting a buried channel in the semiconductor strip, which is entirely below the top-most surface of the strip.
- The maximum depth of the buried channel is less than the maximum depth of the first source/drain feature.
- The dopant concentration of the buried channel is highest under the gate structure.
Potential applications of this technology:
- Semiconductor devices such as transistors and integrated circuits.
- Electronics industry for various electronic devices like smartphones, computers, and other consumer electronics.
Problems solved by this technology:
- Provides a method for fabricating semiconductor devices with specific features and structures.
- Allows for the creation of different distances between the gate structure and the source/drain features.
- Enables the formation of a buried channel with a high dopant concentration under the gate structure.
Benefits of this technology:
- Improved performance and functionality of semiconductor devices.
- Enhanced control over the distances between the gate structure and the source/drain features.
- Increased efficiency and reliability of the buried channel under the gate structure.
Original Abstract Submitted
A method of fabricating a semiconductor device includes forming a gate structure, a first edge structure and a second edge structure on a semiconductor strip. The method further includes forming a first source/drain feature between the gate structure and the first edge structure. The method further includes forming a second source/drain feature between the gate structure and the second edge structure, wherein a distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature. The method further includes implanting a buried channel in the semiconductor strip, wherein the buried channel is entirely below a top-most surface of the semiconductor strip, a maximum depth of the buried channel is less than a maximum depth of the first source/drain feature, and a dopant concentration of the buried channel is highest under the gate structure.
