18366864. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Hsueh-Chang Sung of Zhubei City (TW)
Pei-Ren Jeng of Chu-Bei City (TW)
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366864 titled 'SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
Simplified Explanation
The patent application describes a method for forming two fins made of different materials within an insulation material over a substrate. The first fin has a certain width and the second fin has a different width.
- The method involves creating two fins made of different materials within an insulation material over a substrate.
- The first fin and the second fin are separated by the insulation material.
- The first fin has a specific width, while the second fin has a different width.
- A first capping layer is formed over the first fin, and a second capping layer is formed over the second fin.
- The first capping layer has a certain thickness, while the second capping layer has a different thickness.
Potential applications of this technology:
- Semiconductor manufacturing: This method can be used in the production of semiconductor devices, where the different materials in the fins can enhance performance or enable specific functionalities.
- Nanoelectronics: The ability to create fins with different materials and widths can be utilized in the development of nanoelectronic devices, allowing for improved control and performance.
- Energy storage: The method may find applications in the production of energy storage devices, such as batteries or supercapacitors, where the different materials in the fins can optimize energy storage and release.
Problems solved by this technology:
- Material optimization: By allowing for the use of different materials in the fins, this method enables the selection of materials that are best suited for specific purposes, improving overall device performance.
- Design flexibility: The ability to vary the width of the fins provides greater design flexibility, allowing for the customization of devices to meet specific requirements.
- Enhanced functionality: The use of different materials and widths in the fins can enable the incorporation of additional functionalities into devices, expanding their capabilities.
Benefits of this technology:
- Improved performance: The ability to use different materials and widths in the fins can enhance device performance, such as speed, power efficiency, or energy storage capacity.
- Customization: The method allows for the customization of devices by varying the materials and widths of the fins, enabling the development of tailored solutions for specific applications.
- Versatility: The technology can be applied to various fields, including semiconductor manufacturing, nanoelectronics, and energy storage, providing versatility in its potential applications.
Original Abstract Submitted
In an embodiment, a method includes forming a first fin and a second fin within an insulation material over a substrate, the first fin and the second fin includes different materials, the insulation material being interposed between the first fin and the second fin, the first fin having a first width and the second fin having a second width; forming a first capping layer over the first fin; and forming a second capping layer over the second fin, the first capping layer having a first thickness, the second capping layer having a second thickness different from the first t
