17837664. GRAPHENE-CLAD METAL INTERCONNECT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
GRAPHENE-CLAD METAL INTERCONNECT
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chun-Wei Chang of Taoyuan (TW)
GRAPHENE-CLAD METAL INTERCONNECT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17837664 titled 'GRAPHENE-CLAD METAL INTERCONNECT
Simplified Explanation
The abstract of the patent application describes a technology that uses graphene-clad metal interconnects to improve the performance of interconnect structures in integrated circuits. Here are the key points:
- Graphene-clad metal interconnects are used in both damascene and patterned interconnect structures at lower metal layers.
- This technology reduces resistance in interconnects by extending the material properties of graphene to the metal layers.
- The graphene cladding can be used with or without a metal barrier/liner.
- If a metal barrier/liner is present, it can catalyze the growth of an overlying graphene layer.
- Graphene can also be selectively grown on barrier surfaces.
- The patent application describes fully integrated structures and process flows for integrated circuits with graphene-clad metallization.
Potential applications of this technology:
- Integrated circuits and electronic devices that require high-performance interconnects.
- Graphene-clad metal interconnects can be used in various industries, including telecommunications, computing, and consumer electronics.
Problems solved by this technology:
- Resistance in interconnects is a common issue in integrated circuits, leading to reduced performance and increased power consumption.
- This technology addresses the problem of high resistance by utilizing graphene-clad metal interconnects, which have improved conductivity.
Benefits of this technology:
- Significant reductions in resistance in interconnect structures, leading to improved performance and lower power consumption in integrated circuits.
- The use of graphene-clad metal interconnects extends the material properties of graphene to the metal layers, enhancing conductivity.
- The technology provides flexibility in the use of metal barriers/liners, allowing for catalysis of graphene growth or selective growth on barrier surfaces.
Original Abstract Submitted
A graphene-clad metal interconnect extends material properties of graphene to both damascene and patterned interconnect structures at lower metal layers, leading to significant reductions in resistance. Graphene cladding can be used with or without a metal barrier/liner. Presence of a barrier/liner can serve to catalyze growth of an overlying graphene layer. Graphene may also be selectively grown on barrier surfaces. Fully integrated structures and process flows for integrated circuits with graphene-clad metallization are described.
