18526062. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

Semiconductor Structure Cutting Process and Structures Formed Thereby

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Ryan Chia-Jen Chen of Hsinchu (TW)

Cheng-Chung Chang of Kaohsiung City (TW)

Shao-Hua Hsu of Taitung City (TW)

Yu-Hsien Lin of Kaohsiung City (TW)

Ming-Ching Chang of Hsinchu (TW)

Li-Wei Yin of Hsinchu (TW)

Tzu-Wen Pan of Hsinchu (TW)

Yi-Chun Chen of Hsinchu (TW)

Semiconductor Structure Cutting Process and Structures Formed Thereby - A simplified explanation of the abstract

This abstract first appeared for US patent application 18526062 titled 'Semiconductor Structure Cutting Process and Structures Formed Thereby

Simplified Explanation

The patent application describes methods of cutting gate structures and fins on a substrate to form specific structures. Here is a simplified explanation of the patent:

• The substrate includes first and second fins with an isolation region in between.
• A gate structure is formed with a conformal gate dielectric over the first fin and a gate electrode on top.
• A first insulating fill structure abuts the gate structure and extends vertically from the gate structure to the isolation region.
• A second insulating fill structure abuts the first insulating fill structure and the end sidewall of the second fin.
• The first insulating fill structure is positioned laterally between the gate structure and the second insulating fill structure.

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1. 1. 1. Potential Applications

This technology can be applied in the semiconductor industry for manufacturing advanced integrated circuits with improved gate structures and fins.

1. 1. 1. Problems Solved

This technology solves the problem of efficiently cutting gate structures and fins on a substrate to create precise structures for semiconductor devices.

1. 1. 1. Benefits

The benefits of this technology include enhanced performance and reliability of integrated circuits, as well as potentially reducing manufacturing costs.

1. 1. 1. Potential Commercial Applications

This technology can be commercialized by semiconductor companies for producing high-performance and cost-effective integrated circuits for various electronic devices.

1. 1. 1. Possible Prior Art

One possible prior art could be the use of traditional methods for cutting gate structures and fins on substrates in semiconductor manufacturing processes.

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1. 1. 1. 1. Unanswered Questions

1. 1. 1. How does this technology compare to existing methods of cutting gate structures and fins in terms of efficiency and precision?

This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the advantages of this new approach.

1. 1. 1. What specific semiconductor devices or applications can benefit the most from the structures formed using this technology?

The article does not delve into the specific applications or devices that could benefit the most from the structures created using this technology, leaving this question unanswered.

Original Abstract Submitted

Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.