17943443. GATE CUTS IN A GRATING PATTERN ACROSS AN INTEGRATED CIRCUIT simplified abstract (Intel Corporation)

GATE CUTS IN A GRATING PATTERN ACROSS AN INTEGRATED CIRCUIT

Organization Name

Intel Corporation

Inventor(s)

Shao-Ming Koh of Tigard OR (US)

Leonard P. Guler of Hillsboro OR (US)

Gurpreet Singh of Beaverton OR (US)

Manish Chandhok of Beaverton OR (US)

Matthew J. Prince of Portland OR (US)

GATE CUTS IN A GRATING PATTERN ACROSS AN INTEGRATED CIRCUIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17943443 titled 'GATE CUTS IN A GRATING PATTERN ACROSS AN INTEGRATED CIRCUIT

Simplified Explanation

The patent application describes techniques for forming an integrated circuit with a grating pattern of gate cut structures that separate the gate layers of adjacent semiconductor devices and the source/drain regions of those devices.

• Gate cut structures extend between gate layers of adjacent semiconductor devices and between their source/drain regions.
• Neighboring semiconductor devices have gate structures over their semiconductor regions, with gate cut structures interrupting the gate structure to isolate the gate electrodes of each device.
• The gate cut structures also separate the source/drain regions of neighboring semiconductor devices.
• Subsequent processes enable connections between neighboring gate or source/drain regions.

Potential Applications

The technology described in the patent application could be applied in the manufacturing of advanced integrated circuits, particularly in the development of high-density and high-performance semiconductor devices.

Problems Solved

This technology helps in improving the integration density and performance of semiconductor devices by effectively isolating gate electrodes and source/drain regions of adjacent devices, reducing interference and improving overall device functionality.

Benefits

The benefits of this technology include enhanced device performance, increased integration density, reduced interference between neighboring devices, and improved overall reliability of integrated circuits.

Potential Commercial Applications

• Enhancing the performance and density of advanced semiconductor devices
• Improving the reliability and functionality of integrated circuits

Unanswered Questions

How does this technology impact power consumption in integrated circuits?

The article does not address the potential impact of this technology on power consumption in integrated circuits.

Are there any limitations or drawbacks to implementing this technology in semiconductor device manufacturing?

The article does not discuss any potential limitations or drawbacks associated with implementing this technology in semiconductor device manufacturing.

Original Abstract Submitted

Techniques are provided herein to form an integrated circuit having a grating pattern of gate cut structures such that a gate cut structure extends between the gate layers of adjacent semiconductor devices and between the source or drain regions (e.g., epitaxial regions) of the adjacent semiconductor devices. In an example, neighboring semiconductor devices each include a semiconductor region extending between a source region and a drain region, and a gate structure extending over the semiconductor regions of the neighboring semiconductor devices. In some such examples, a gate cut structure is present between each pair of neighboring semiconductor devices thus interrupting the gate structure and isolating the gate electrode of one semiconductor device from the gate electrode of the other semiconductor device. The gate cut structure further extends to separate the source or drain regions of the neighboring semiconductor devices. Subsequent processes allow neighboring gate or source or drain regions connections.