18097255. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sheng-Yi Hsiao of Hsinchu (TW)
Ryan Chia-Jen Chen of Hsinchu (TW)
Tzu-Ging Lin of Kaohsiung (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18097255 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor device structure and methods for its formation. The structure includes a fin placed on a semiconductor substrate, with the fin having a certain width. An isolation region surrounds the fin, and a gate electrode is positioned over both the fin and the isolation region. The gate electrode is filled with a material that comes into contact with a flat portion of the semiconductor substrate's top surface, which has a width greater than that of the fin.
- The structure includes a fin placed on a semiconductor substrate
- An isolation region surrounds the fin
- A gate electrode is positioned over the fin and the isolation region
- The gate electrode is filled with a material
- The fill material comes into contact with a flat portion of the semiconductor substrate's top surface
- The flat portion of the top surface has a width greater than that of the fin
Potential Applications
This technology has potential applications in the field of semiconductor devices, particularly in the development of more efficient and high-performance devices.
Problems Solved
The patent application addresses the need for improved semiconductor device structures that can enhance performance and efficiency. By utilizing a fin structure and a fill material in the gate electrode, the technology aims to overcome limitations of conventional designs.
Benefits
The described semiconductor device structure offers several benefits:
- Improved performance and efficiency
- Enhanced functionality of semiconductor devices
- Potential for smaller device sizes and increased integration
- Better control over electrical properties of the device structure.
Original Abstract Submitted
A semiconductor device structure, along with methods of forming such, are described. The structure includes a fin disposed over a semiconductor substrate, and the fin has a first width. The structure further includes an isolation region disposed around the fin, a gate electrode disposed over the fin and the isolation region, and a fill material disposed in the gate electrode. The fill material is in contact with a top surface of a portion of the semiconductor substrate, the top surface has at least a portion having a substantially flat cross-section, and the portion of the top surface has a second width substantially greater than the first width.
