18446524. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyeongbeom Park of Hwaseong-si (KR)
Jangho Lee of Hwaseong-si (KR)
Wookyung You of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446524 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes transistors on a substrate, with a first interlayer insulating layer on top of the transistors. There is a lower interconnection line located in the upper portion of the first interlayer insulating layer. An etch stop layer is present on both the first interlayer insulating layer and the lower interconnection line. On top of the etch stop layer, there is a second interlayer insulating layer, and within this layer, an upper interconnection line is formed. The upper interconnection line includes a via portion that penetrates the etch stop layer to make contact with the lower interconnection line. Additionally, there is an etch stop pattern on the etch stop layer, which is in contact with the first sidewall of the via portion. The second interlayer insulating layer extends over the etch stop pattern and the top surface of the etch stop layer, excluding the etch stop pattern. The dielectric constant of the etch stop pattern is higher than that of the etch stop layer.
- The patent application describes a semiconductor device with a specific arrangement of layers and interconnections.
- The device includes transistors, interlayer insulating layers, interconnection lines, and an etch stop layer.
- The etch stop layer and pattern play a crucial role in preventing unwanted etching during the fabrication process.
- The arrangement of layers and materials helps to improve the performance and reliability of the semiconductor device.
Potential Applications
- This technology can be applied in the manufacturing of various semiconductor devices, such as microprocessors, memory chips, and integrated circuits.
- It can be used in the production of electronic devices, including smartphones, tablets, computers, and other consumer electronics.
Problems Solved
- The use of the etch stop layer and pattern helps to prevent undesired etching during the fabrication process, ensuring the integrity of the device structure.
- The arrangement of layers and materials helps to reduce signal interference and improve the overall performance of the semiconductor device.
- It solves the problem of maintaining proper insulation and preventing short circuits between different layers and interconnections.
Benefits
- The technology improves the reliability and durability of semiconductor devices, leading to longer lifespan and reduced failure rates.
- It allows for the fabrication of more complex and advanced integrated circuits, enabling higher performance and functionality.
- The arrangement of layers and materials helps to optimize the electrical characteristics of the device, leading to improved signal transmission and reduced power consumption.
Original Abstract Submitted
A semiconductor device includes transistors on a substrate, a first interlayer insulating layer on the transistors, a lower interconnection line in an upper portion of the first interlayer insulating layer, an etch stop layer on the first interlayer insulating layer and the lower interconnection line, a second interlayer insulating layer on the etch stop layer, an upper interconnection line in the second interlayer insulating layer, the upper interconnection line including a via portion penetrating the etch stop layer to contact the lower interconnection line, and an etch stop pattern on the etch stop layer and in contact with a first sidewall of the via portion. The second interlayer insulating layer extends on the etch stop pattern and a top surface of the etch stop layer free of the etch stop pattern. A dielectric constant of the etch stop pattern is higher than a dielectric constant of the etch stop layer.
