18331296. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Heon Jong Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18331296 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract includes active patterns, gate electrodes, trenches, an active cut, and a flowable material layer. Here is a simplified explanation of the patent application:
- The device has active patterns on a substrate, with gate electrodes on top.
- Trenches separate the active patterns and contain an active cut that contacts the patterns.
- A flowable material layer, including insulating material, is present in some of the trenches.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors or integrated circuits.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by providing better isolation and contact between components.
Benefits
The use of flowable material layers enhances the reliability and functionality of the semiconductor device, leading to improved overall performance.
Potential Commercial Applications
The technology could find applications in the electronics industry for the production of faster and more reliable electronic devices.
Possible Prior Art
One possible prior art could be the use of traditional insulating materials in semiconductor devices to achieve isolation and contact between components.
Unanswered Questions
How does the flowable material layer affect the overall reliability of the semiconductor device?
The flowable material layer enhances reliability by providing better isolation and contact between components, but the specific mechanisms behind this improvement are not detailed in the abstract.
What are the specific characteristics of the active cut that enable it to effectively contact the active patterns?
The abstract mentions an active cut extending along sidewalls and a bottom surface of the trench, but it does not elaborate on the specific design or properties of the active cut that make it effective in contacting the active patterns.
Original Abstract Submitted
A semiconductor device includes a substrate, first and second active patterns extending in a first horizontal direction on the substrate, first and second gate electrodes extending in a second horizontal direction on the first and second active patterns, respectively, a first trench extending in the second horizontal direction between the first and second gate electrodes and separating the first and second active patterns, at least part of the first trench is in the substrate, an active cut extending along sidewalls and a bottom surface of the first trench and contacting each of the first and second active patterns, a second trench on the active cut in the first trench, and a flowable material layer in at least part of the second trench, the flowable material layer including a flowable insulating material and not being in contact with each of the substrate and the first and second active patterns.
