17460049. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Yi-Chun Chen of Hsinchu City (TW)
Jih-Jse Lin of Sijhih City (TW)
Ryan Chia-Jen Chen of Hsinchu City (TW)
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17460049 titled 'FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes a substrate, two fin structures, and two gate structures. The device also includes a dielectric cut structure that separates the gate structures from each other.
- The semiconductor device includes a substrate, two fin structures, and two gate structures.
- The dielectric cut structure separates the gate structures from each other.
- The dielectric cut structure extends into the substrate and has two portions.
- The width of the first portion increases with increasing depth into the substrate.
- The width of the second portion decreases with increasing depth into the substrate.
- The second portion is located below the first portion.
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuits
- Electronics industry
Problems solved by this technology:
- Improved performance and efficiency of semiconductor devices
- Enhanced control and isolation of gate structures
Benefits of this technology:
- Increased functionality and reliability of semiconductor devices
- Improved manufacturing processes and yield
- Enhanced performance and efficiency of electronic devices
Original Abstract Submitted
A semiconductor device includes a substrate; a first fin structure extending along a first lateral direction; a second fin structure extending along the first lateral direction; a first gate structure extending along a second lateral direction and straddles the first fin structure; a second gate structure extending along the second lateral direction and straddles the second fin structure. The semiconductor device further includes a dielectric cut structure that separates the first and second gate structures from each other. The dielectric cut structure extends into the substrate and comprises a first portion and a second portion. A width of the first portion along the second lateral direction increases with increasing depth into the substrate and a width of the second portion along the second lateral direction decreases with increasing depth into the substrate. The second portion is located below the first portion.
