17958291. PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
Contents
- 1 PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Leonard P. Guler of Hillsboro OR (US)
Robert Joachim of Beaverton OR (US)
Shengsi Liu of Portland OR (US)
Hongqian Sun of Sammamish WA (US)
Tahir Ghani of Portland OR (US)
PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17958291 titled 'PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE
Simplified Explanation
Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a plug between two gates within a transistor layer of a semiconductor device. In embodiments, the plug includes a cap at the top of the plug and a liner surrounding at least a portion of the cap, and a base below the cap and the liner. The cap may include a metal. A top of the cap may be even with, or substantially even with, the top of the two gates. The plug may provide a more even surface at the top of a transistor layer where the plug fills in for a gate cut. Other embodiments may be described and/or claimed.
- Plug formation between two gates in a transistor layer of a semiconductor device
- Plug includes a cap, liner, and base
- Cap made of metal, top of cap even with top of gates
- Provides a more even surface at the top of the transistor layer
Potential Applications
This technology could be applied in the semiconductor industry for improving the performance and reliability of semiconductor devices by creating a more uniform surface within the transistor layer.
Problems Solved
This technology solves the problem of uneven surfaces within the transistor layer of semiconductor devices, which can impact the functionality and efficiency of the devices.
Benefits
The benefits of this technology include improved performance, reliability, and efficiency of semiconductor devices, as well as a more precise and controlled manufacturing process.
Potential Commercial Applications
- "Enhancing Semiconductor Device Performance with Plug Formation Technology"
Possible Prior Art
One possible prior art in this field could be the use of different materials or techniques for filling in gaps between gates in a transistor layer of a semiconductor device.
=== What materials are used for the cap in the plug formation process? The cap in the plug formation process may include a metal material to provide structural support and conductivity.
=== How does the plug formation process impact the overall performance of the semiconductor device? The plug formation process helps create a more even surface at the top of the transistor layer, which can improve the performance and reliability of the semiconductor device by reducing potential issues related to uneven surfaces.
Original Abstract Submitted
Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a plug between two gates within a transistor layer of a semiconductor device. In embodiments, the plug includes a cap at a top of the plug and a liner surrounding at least a portion of the cap, and a base below the cap and the liner. The cap may include a metal. A top of the cap may be even with, or substantially even with, the top of the two gates. The plug may provide a more even surface at a top of a transistor layer where the plug fills in for a gate cut. Other embodiments may be described and/or claimed.
