18184901. INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME
Organization Name
Inventor(s)
Seungchan Yun of Waterford NY (US)
Seungmin Song of Halfmoon NY (US)
Myunghoon Jung of Clifton Park NY (US)
Keumseok Park of Slingerlands NY (US)
Kang-ill Seo of Springfield VA (US)
INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18184901 titled 'INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME
Simplified Explanation
- An integrated circuit device includes an upper transistor on a substrate with an upper channel region.
- The device also includes a lower transistor between the substrate and the upper transistor with a lower channel region.
- An integrated insulator is present between the lower and upper channel regions, consisting of an outer layer and an inner layer made of different materials.
Potential Applications
- This technology can be used in the manufacturing of integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.
Problems Solved
- Helps in improving the performance and efficiency of integrated circuits by reducing interference between the upper and lower transistors.
- Enhances the reliability and longevity of the integrated circuit device by providing insulation between the different channel regions.
Benefits
- Increased functionality and speed of electronic devices.
- Enhanced durability and stability of integrated circuits.
- Improved overall performance and efficiency of electronic systems.
Original Abstract Submitted
An integrated circuit device may comprise an upper transistor that is on a substrate. The upper transistor may comprise an upper channel region. The integrated circuit device may further comprise a lower transistor that is between the substrate and the upper transistor. The lower transistor may comprise a lower channel region. The integrated circuit device may further include an integrated insulator that is between the lower channel region and the upper channel region. The integrated insulator may comprise an outer layer and an inner layer in the outer layer, wherein the inner layer and the outer layer comprise different materials.
