18138825. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Dong Woo Kim of Suwon-si (KR)

Jin Bum Kim of Suwon-si (KR)

Sang Moon Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18138825 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The abstract describes a semiconductor device that includes an active pattern with a lower pattern and multiple sheet patterns on a substrate. The lower pattern has a protruding pattern and a capping pattern in contact with the protruding pattern. There are also first and second gate structures and a source/drain pattern on the lower pattern. The thickness of the capping pattern differs in portions that overlap the first and second gate structures.

• The semiconductor device includes an active pattern with a lower pattern and multiple sheet patterns.
• The lower pattern has a protruding pattern that extends from the substrate.
• A capping pattern is in contact with the protruding pattern.
• The device has first and second gate structures that are spaced apart from each other.
• A source/drain pattern is in contact with the sheet pattern.
• The thickness of the capping pattern varies depending on the portion that overlaps the first or second gate structure.

Potential applications of this technology:

• This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
• It can be utilized in integrated circuits for improved performance and functionality.

Problems solved by this technology:

• The device addresses the need for precise control of thickness in different areas of the capping pattern.
• It solves the challenge of maintaining proper contact between the capping pattern and the protruding pattern.

Benefits of this technology:

• The varying thickness of the capping pattern allows for optimized performance in different areas of the device.
• It enables improved electrical conductivity and signal transmission.
• The device offers enhanced reliability and stability in operation.

Original Abstract Submitted

There is provided a semiconductor device including an active pattern which includes a lower pattern extending in a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction on a substrate, the lower pattern including a protruding pattern protruding from the substrate in the second direction, and a capping pattern being in contact with the protruding pattern on the protruding pattern, a first gate structure and a second gate structure which are disposed on the lower pattern and spaced apart from each other in the first direction, and a source/drain pattern which is disposed on the lower pattern and in contact with the sheet pattern, wherein a thickness of the capping pattern in a portion that overlaps the first gate structure is different from a thickness of the capping pattern in a portion that overlaps the second gate structure.