18370120. WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS AND SPLIT ACTIVE REGIONS simplified abstract (SKYWORKS SOLUTIONS, INC.)
Contents
- 1 WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS AND SPLIT ACTIVE REGIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS AND SPLIT ACTIVE REGIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS AND SPLIT ACTIVE REGIONS
Organization Name
Inventor(s)
Guillaume Alexandre Blin of Carlisle MA (US)
WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS AND SPLIT ACTIVE REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18370120 titled 'WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED GATE ELECTRODE FINGERS AND SPLIT ACTIVE REGIONS
Simplified Explanation
The patent application describes a transistor with a unique structure involving multiple drain and source regions separated by low conductivity regions, as well as gate electrode fingers positioned over specific active regions.
- The transistor has a first drain region split into two sub-regions separated by a low conductivity region.
- The first source region is split into two sub-regions separated by another low conductivity region.
- A second source region is divided into two sub-regions separated by a third low conductivity region.
- Gate electrode fingers are positioned over specific active regions between the drain and source regions.
Potential Applications
This technology could be applied in:
- Power electronics
- Integrated circuits
- Semiconductor devices
Problems Solved
This technology addresses issues related to:
- Power efficiency
- Heat dissipation
- Circuit miniaturization
Benefits
The benefits of this technology include:
- Improved performance
- Enhanced reliability
- Increased functionality
Potential Commercial Applications
This technology could be commercially applied in:
- Consumer electronics
- Automotive industry
- Telecommunications sector
Possible Prior Art
One possible prior art for this technology could be:
- Traditional transistor structures with single drain and source regions.
Unanswered Questions
How does this transistor structure impact overall device performance?
The article does not delve into the specific performance metrics or characteristics influenced by this unique transistor structure. Further research or testing may be needed to determine the exact impact on device performance.
What are the manufacturing challenges associated with this transistor design?
The article does not discuss the potential manufacturing challenges that may arise when producing transistors with this complex structure. Understanding the manufacturing process and any associated difficulties could be crucial for implementing this technology on a larger scale.
Original Abstract Submitted
A transistor comprising a first drain region split into first and second drain sub-regions aligned lengthwise and separated by a first low conductivity region, a first source region disposed on a first side of the first drain region split into first and second source sub-regions aligned lengthwise and separated by a second low conductivity region, a second source region disposed on a second side of the first drain region opposite the first side, the second source region split into third and fourth source sub-regions aligned lengthwise and separated by a third low conductivity region, a first gate electrode finger disposed over first and second active regions between the first drain region and first source region, and a second gate electrode finger disposed over third and fourth active regions between the first drain region and second source region.
