18504473. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Bo-Wen Hsieh of Miaoli County (TW)

Wen-Hsin Chan of Hsinchu County (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18504473 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a semiconductor substrate, two semiconductor fins, an isolation structure, and a gate structure. The gate structure consists of three work function layers surrounding the semiconductor fins.

  • The first and second semiconductor fins extend upwards from the semiconductor substrate.
  • The isolation structure is located between the two semiconductor fins.
  • The gate structure comprises a first work function layer, a second work function layer, and a third work function layer.
  • The first work function layer surrounds the semiconductor fins.
  • The second work function layer is positioned over the first work function layer and surrounds one of the semiconductor fins.
  • The third work function layer is located over the second work function layer and the isolation structure.
  • The first work function layer is in contact with both the second and third work function layers.
    • Potential Applications:**
  • Advanced semiconductor devices
  • High-performance electronics
  • Integrated circuits
    • Problems Solved:**
  • Enhancing device performance
  • Improving efficiency of semiconductor components
  • Increasing speed and reliability of electronic devices
    • Benefits:**
  • Higher performance capabilities
  • Improved functionality of electronic devices
  • Enhanced efficiency in semiconductor technology


Original Abstract Submitted

A semiconductor device includes a semiconductor substrate, a first semiconductor fin, a second semiconductor fin, an isolation structure, and a gate structure. The first and second semiconductor fins extend upwards from a top surface of the semiconductor substrate. The isolation structure is between the first semiconductor fin and the second semiconductor fin. The gate structure includes a first work function layer, a second work function layer, and a third work function layer. The first work function layer surrounds the first semiconductor fin and the second semiconductor fin. The second work function layer surrounds the first semiconductor fin and is over the first work function layer. The third work function layer surrounds the first semiconductor fin and is over the second work function layer and the isolation structure. The first work function layer is in contact with the second work function layer and the third work function layer.

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