Intel corporation (20240105771). INTEGRATED CIRCUIT STRUCTURES WITH CHANNEL CAP REDUCTION simplified abstract

INTEGRATED CIRCUIT STRUCTURES WITH CHANNEL CAP REDUCTION

Organization Name

intel corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Sean Pursel of Hillsboro OR (US)

Tsuan-Chung Chang of Portland OR (US)

Tahir Ghani of Portland OR (US)

INTEGRATED CIRCUIT STRUCTURES WITH CHANNEL CAP REDUCTION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105771 titled 'INTEGRATED CIRCUIT STRUCTURES WITH CHANNEL CAP REDUCTION

Simplified Explanation

The abstract describes integrated circuit structures with channel cap reduction and methods of fabricating such structures. One example is a structure with a sub-fin structure beneath a stack of nanowires, a dielectric cap over the ends of the nanowires, a gate electrode around the nanowires, and a gate dielectric structure between the gate electrode and the nanowires.

• Integrated circuit structure with channel cap reduction:

   - Includes a sub-fin structure beneath a stack of nanowires
   - Dielectric cap vertically over the ends of the nanowires
   - Gate electrode around the nanowires
   - Gate dielectric structure between the gate electrode and the nanowires

• Potential Applications:

   - Advanced semiconductor devices
   - High-performance electronics
   - Nanotechnology applications

• Problems Solved:

   - Improved performance and efficiency of integrated circuits
   - Reduction of channel capacitance
   - Enhanced control of electrical properties

• Benefits:

   - Higher speed and lower power consumption
   - Increased integration density
   - Enhanced reliability and stability

• Potential Commercial Applications:

   - Semiconductor manufacturing companies
   - Electronics industry
   - Research institutions

• Possible Prior Art:

   - Previous methods of reducing channel cap in integrated circuits
   - Existing structures with nanowires and gate electrodes

1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing methods of channel cap reduction?

This article does not directly compare the new technology to existing methods, leaving the reader to wonder about its advantages and limitations in relation to current practices.

1. 1. 1. 1. What are the specific fabrication techniques used to create the integrated circuit structures described?

The article does not delve into the detailed fabrication processes involved in implementing the channel cap reduction and sub-fin structures, leaving a gap in understanding for those interested in the technical aspects of the innovation.

Original Abstract Submitted

integrated circuit structures having channel cap reduction, and methods of fabricating integrated circuit structures having channel cap reduction, are described. for example, an integrated circuit structure includes a sub-fin structure beneath a stack of nanowires, the stack of nanowires having a first end and a second end. a dielectric cap has a first portion vertically over the first end of the stack of nanowires and has a second portion vertically over the second end of the stack of nanowires. the dielectric cap is not vertically over a location between the first end and the second end of the stack of nanowires. a gate electrode is over and around the stack of nanowires and laterally between the first and second portions of the dielectric cap. a gate dielectric structure is between the gate electrode and the stack of nanowires.