Intel corporation (20240113108). WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sukru Yemenicioglu of Portland OR (US)
Leonard P. Guler of Hillsboro OR (US)
Hongqian Sun of Sammamish WA (US)
Shengsi Liu of Portland OR (US)
Tahir Ghani of Portland OR (US)
WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113108 titled 'WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE
Simplified Explanation
Embodiments described in this patent application relate to the formation of a wall within a metal gate cut in a transistor layer of a semiconductor device, where the wall contains a volume of gas such as air, nitrogen, or another inert gas.
- Formation of a wall within a metal gate cut in a transistor layer
- Wall contains a volume of gas such as air, nitrogen, or another inert gas
Potential Applications
The technology described in this patent application could potentially be applied in the semiconductor industry for the manufacturing of advanced transistor devices.
Problems Solved
This technology solves the problem of improving the performance and efficiency of semiconductor devices by introducing a gas-filled wall within the metal gate cut.
Benefits
The benefits of this technology include enhanced transistor performance, increased efficiency, and potentially reduced power consumption in semiconductor devices.
Potential Commercial Applications
- "Gas-Filled Wall Formation in Semiconductor Devices: Commercial Applications"
Possible Prior Art
There may be prior art related to the formation of walls within semiconductor devices, but specific examples are not provided in this patent application.
Unanswered Questions
How does the introduction of a gas-filled wall impact the overall functionality of the semiconductor device?
The patent application does not delve into the specific effects of the gas-filled wall on the performance of the semiconductor device.
Are there any limitations or challenges associated with implementing this technology in semiconductor manufacturing processes?
The patent application does not address any potential limitations or challenges that may arise during the implementation of this technology.
Original Abstract Submitted
embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a wall within a metal gate cut in a transistor layer of a semiconductor device, where the wall includes a volume of a gas such as air, nitrogen, or another inert gas. other embodiments may be described and/or claimed.
