Intel corporation (20240112916). METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract

METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS

Organization Name

intel corporation

Inventor(s)

Swapnadip Ghosh of Hillsboro OR (US)

Matthew J. Prince of Portland OR (US)

Alison V. Davis of Portland OR (US)

Chun C. Kuo of Hillsboro OR (US)

Andrew Arnold of Hillsboro OR (US)

Reza Bayati of Portland OR (US)

METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240112916 titled 'METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS

Simplified Explanation

The patent application describes a technique for forming semiconductor devices with a gate cut after the formation of source/drain contacts. This involves a gate structure surrounding a semiconductor region, with conductive contacts formed over the source and drain regions along a source/drain trench. The gate structure is interrupted by a dielectric gate cut that extends into the source/drain trench, cutting into the contacts. The contacts are formed before the gate cut to ensure complete fill of conductive material, with a liner structure on the contacts being broken by the intrusion of the gate cut.

• Gate cut formed after source/drain contacts
• Gate structure surrounds semiconductor region
• Conductive contacts formed over source/drain regions in trench
• Dielectric gate cut extends into source/drain trench, cutting into contacts
• Contacts formed before gate cut for complete fill of material
• Liner structure on contacts broken by gate cut intrusion

Potential Applications

This technology can be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.

Problems Solved

This technology solves the problem of ensuring complete fill of conductive material in the contacts while also allowing for the formation of a gate cut after the contacts are already in place.

Benefits

The benefits of this technology include improved device performance, increased efficiency in manufacturing processes, and the ability to create more complex semiconductor structures.

Potential Commercial Applications

Potential commercial applications of this technology include the production of high-performance electronic devices for various industries, including consumer electronics, telecommunications, and automotive.

Possible Prior Art

One possible prior art could be the use of gate cuts in semiconductor devices, but the specific technique of forming the gate cut after the source/drain contacts may be a novel approach.

How does this technique compare to traditional methods of forming semiconductor devices?

This technique offers a unique approach by forming the gate cut after the source/drain contacts, which may provide advantages in terms of device performance and manufacturing efficiency.

What are the potential challenges or limitations of implementing this technology in semiconductor manufacturing processes?

One potential challenge could be the precise alignment and control required to ensure that the gate cut does not damage the existing contacts or affect the overall device functionality. Additionally, the introduction of a gate cut after the contacts may require additional process steps, which could impact production costs and cycle times.

Original Abstract Submitted

techniques are provided herein to form semiconductor devices that include a gate cut formed after the formation of source/drain contacts. in an example, a semiconductor device includes a gate structure around or otherwise on a semiconductor region that extends from a source region to a drain region. conductive contacts formed over the source and drain regions along a source/drain trench. the gate structure may be interrupted with a dielectric gate cut that further extends past the gate trench and into the source/drain trench where it can cut into one or more of the contacts. the contacts are formed before the gate cut to ensure complete fill of conductive material when forming the contacts. accordingly, a liner structure on the conductive contacts is also broken by the intrusion of the gate cut and does not extend further up or down the sidewalls of the gate cut.