Intel corporation (20240113194). SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES simplified abstract
Contents
- 1 SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
Mekha George of Hillsboro OR (US)
Seda Cekli of Portland OR (US)
Kilhyun Bang of Portland OR (US)
Krishna Ganesan of Portland OR (US)
SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113194 titled 'SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES
Simplified Explanation
The patent application describes materials and techniques for recessing heterogeneous materials in integrated circuit (IC) dies. A first etch is used to reveal a surface at a desired depth, while a second etch removes material laterally to reveal sidewalls down to the desired depth of the recess. The first etch may be a cyclical etch, and the second etch may be a continuous etch. Both etches may occur in the same chamber and be selective to materials with similarities. An IC die may have different, substantially coplanar materials at a recessed surface between and below sidewalls of another material, with a squared profile. The recess may be over transistor structures.
- Materials and techniques for recessing heterogeneous materials in IC dies
- First etch reveals surface at desired depth, second etch removes material laterally to reveal sidewalls
- First etch may be cyclical, second etch may be continuous
- Both etches may occur in the same chamber and be selective to similar materials
- IC die may have different materials at a recessed surface with a squared profile
Potential Applications
The technology can be applied in the semiconductor industry for creating recessed surfaces in IC dies for various applications such as transistor structures and other electronic components.
Problems Solved
This technology solves the problem of accurately and selectively recessing heterogeneous materials in IC dies to create complex structures with precise dimensions and profiles.
Benefits
The benefits of this technology include improved manufacturing processes for IC dies, enhanced performance of electronic components, and the ability to create intricate designs with different materials at recessed surfaces.
Potential Commercial Applications
Potential commercial applications of this technology include semiconductor manufacturing companies, electronics manufacturers, and research institutions developing advanced integrated circuits for various electronic devices.
Possible Prior Art
One possible prior art could be the use of traditional etching techniques in semiconductor manufacturing to create recessed structures in IC dies. However, the specific combination of cyclical and continuous etches for selectively recessing heterogeneous materials may be a novel aspect of this technology.
Unanswered Questions
How does this technology compare to existing methods for recessing materials in IC dies?
This article does not provide a direct comparison to existing methods or technologies for recessing materials in IC dies. It would be helpful to understand the advantages and limitations of this new approach in relation to traditional techniques.
What are the potential challenges or limitations of implementing this technology in semiconductor manufacturing processes?
The article does not address any potential challenges or limitations that may arise when implementing this technology in semiconductor manufacturing processes. It would be important to consider factors such as scalability, cost-effectiveness, and compatibility with existing fabrication equipment.
Original Abstract Submitted
materials and techniques for recessing heterogenous materials in integrated circuit (ic) dies. a first etch may reveal a surface at a desired depth, and a second etch may remove material laterally to reveal sidewalls down to the desired depth of the recess. the first etch may be a cyclical etch, and the second etch may be a continuous etch. the first and second etches may occur in a same chamber. the first and second etches may each be selective to materials with similarities. an ic die may have different, substantially coplanar materials at a recessed surface between and below sidewalls of another material. the recess may have squared profile. the recess may be over transistor structures.
