17459865. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shih-Yao Lin of New Taipei City (TW)

Chih-Han Lin of Hsinchu City (TW)

Chen-Ping Chen of Toucheng Township (TW)

Hsiao Wen Lee of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17459865 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a semiconductor device that consists of three stack structures made of semiconductor layers. These stack structures are vertically spaced from each other and extend along a first lateral direction. The second stack structure is positioned between the first and third stack structures. The device also includes a first gate structure that wraps around each of the semiconductor layers and extends along a second lateral direction. The semiconductor layers of the first and second stack structures are connected to respective source/drain structures, while the semiconductor layers of the third stack structure are connected to a dielectric passivation layer.

  • The semiconductor device has three stack structures made of vertically spaced semiconductor layers.
  • The second stack structure is positioned between the first and third stack structures.
  • A first gate structure wraps around each of the semiconductor layers and extends along a different lateral direction.
  • The semiconductor layers of the first and second stack structures are connected to respective source/drain structures.
  • The semiconductor layers of the third stack structure are connected to a dielectric passivation layer.

Potential Applications

  • Integrated circuits
  • Microprocessors
  • Memory devices
  • Power electronics

Problems Solved

  • Improved performance and functionality of semiconductor devices
  • Enhanced integration of components
  • Increased efficiency and reliability

Benefits

  • Higher density of components
  • Improved electrical performance
  • Reduced power consumption
  • Enhanced reliability and durability


Original Abstract Submitted

A semiconductor device includes a first stack structure, a second stack structure, and a third stack structure. Each of the stack structure includes semiconductor layers vertically spaced from one another. The first, second, and third stack structures all extend along a first lateral direction. The second stack structure is disposed between the first and third stack structures. The semiconductor device includes a first gate structure that extends along a second lateral direction and wraps around each of the semiconductor layers. The semiconductor layers of the first stack structure are coupled with respective source/drain structures. The semiconductor layers of the second stack structure are coupled with respective source/drain structures. The semiconductor layers of the third stack structure are coupled with a dielectric passivation layer.

Retrieved from "http://wikipatents.org/index.php?title=17459865._SEMICONDUCTOR_DEVICES_AND_METHODS_OF_MANUFACTURING_THEREOF_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=20308"