18156624. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DUMMY FIN STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DUMMY FIN STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Tzung-Yi Tsai of Taoyuan City (TW)

Yen-Ming Chen of Chu-Pei City (TW)

Tsung-Lin Lee of Hsinchu City (TW)

Chih-Chieh Yeh of Taipei City (TW)

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DUMMY FIN STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18156624 titled 'FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DUMMY FIN STRUCTURE

Simplified Explanation

The abstract describes a new structure and method for a fin field effect transistor (FinFET) device. Here are the key points:

  • The FinFET device structure includes an isolation structure over a substrate.
  • It also includes a first fin structure extended above the isolation structure.
  • There is a second fin structure adjacent to the first fin structure.
  • A material layer is formed over the fin structure.
  • The material layer and the isolation structure are made of different materials.
  • The material layer has a top surface with a top width and a bottom surface with a bottom width.
  • The bottom width is greater than the top width.

Potential applications of this technology:

  • This technology can be used in the manufacturing of advanced semiconductor devices.
  • It can improve the performance and efficiency of FinFET devices.
  • It can be applied in various electronic devices such as smartphones, computers, and IoT devices.

Problems solved by this technology:

  • The use of dummy fin structures helps in reducing leakage current and improving device performance.
  • The different materials used in the material layer and isolation structure can provide better control over the electrical properties of the device.
  • The variation in width between the top and bottom surfaces of the material layer can enhance the device's performance.

Benefits of this technology:

  • Improved performance and efficiency of FinFET devices.
  • Reduced leakage current.
  • Better control over electrical properties.
  • Enhanced device performance.


Original Abstract Submitted

A fin field effect transistor (FinFET) device structure with dummy fin structures and method for forming the same are provided. The FinFET device structure includes an isolation structure over a substrate, and a first fin structure extended above the isolation structure. The fin field effect transistor (FinFET) device structure includes a second fin structure adjacent to the first fin structure, and a material layer formed over the fin structure. The material layer and the isolation structure are made of different materials, the material layer has a top surface with a top width and a bottom surface with a bottom width, and the bottom width is greater than the top width.

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