18151575. METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chia-Ming Tsai of Hsinchu (TW)
Chandrashekhar Prakash Savant of Hsinchu (TW)
METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151575 titled 'METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS
Simplified Explanation
The present disclosure describes a method for creating gate stacks with multiple layers of titanium-aluminum (TiAl) that have different concentrations of aluminum (Al).
- The gate structure includes a first TiAl layer with a specific Al/Ti ratio.
- The gate structure also includes a second TiAl layer with a higher Al/Ti ratio than the first layer.
Potential Applications
This technology could be used in various industries and applications, including:
- Semiconductor manufacturing
- Integrated circuit fabrication
- Electronics production
Problems Solved
The method described in the patent application addresses the following problems:
- Achieving precise control over the Al/Ti ratio in gate stacks.
- Enhancing the performance and efficiency of gate structures.
- Improving the reliability and durability of electronic devices.
Benefits
The use of multiple TiAl layers with different Al concentrations offers several benefits:
- Allows for fine-tuning the properties of gate stacks to meet specific requirements.
- Enhances the performance and functionality of electronic devices.
- Provides improved control over the manufacturing process, leading to higher yields and lower costs.
Original Abstract Submitted
The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.
