18519559. SEMICONDUCTOR DEVICE INCLUDING UNILATERALLY EXTENDING GATES AND METHOD OF FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICE INCLUDING UNILATERALLY EXTENDING GATES AND METHOD OF FORMING SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ling-Sung Wang of Hsinchu (TW)
SEMICONDUCTOR DEVICE INCLUDING UNILATERALLY EXTENDING GATES AND METHOD OF FORMING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519559 titled 'SEMICONDUCTOR DEVICE INCLUDING UNILATERALLY EXTENDING GATES AND METHOD OF FORMING SAME
Simplified Explanation
The semiconductor device described in the abstract includes first and second active regions separated by a gap and gate structures extending over these regions. The gate structures extend beyond the sides of the active regions unilaterally and some gate structures also extend bilaterally beyond the sides of the active regions.
- The semiconductor device has first and second active regions separated by a gap.
- Gate structures are positioned over the active regions and extend in a direction perpendicular to the first direction.
- The gate structures extend unilaterally beyond the sides of the active regions.
- Some gate structures also extend bilaterally beyond the sides of the active regions.
Potential Applications
The technology described in this patent application could be used in:
- Semiconductor manufacturing
- Integrated circuit design
- Power electronics
Problems Solved
This technology helps to address issues related to:
- Improving semiconductor device performance
- Enhancing efficiency in electronic devices
- Reducing power consumption
Benefits
The benefits of this technology include:
- Increased functionality of semiconductor devices
- Improved overall performance of electronic systems
- Potential for energy savings in electronic devices
Original Abstract Submitted
A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.
