18387801. DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

From WikiPatents
Jump to navigation Jump to search

DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Jun-De Jin of Hsinchu City (TW)

DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH - A simplified explanation of the abstract

This abstract first appeared for US patent application 18387801 titled 'DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN ANTENNA SWITCH

Simplified Explanation

    • Explanation:**

The patent application discloses devices and methods for improving the insertion loss performance of an antenna switch. One example provided is a semiconductor device designed to function as an antenna switch. The device includes a substrate, a dielectric layer, and a polysilicon region.

    • Bullet Points:**
  • Semiconductor device designed for use as an antenna switch
  • Includes substrate, dielectric layer, and polysilicon region
  • Substrate consists of intrinsic substrate, metal-oxide-semiconductor device, and isolation feature
  • Isolation feature is in contact with intrinsic substrate and positioned adjacent to the metal-oxide-semiconductor device
    • Potential Applications:**
  • Mobile devices
  • Wireless communication systems
  • Internet of Things (IoT) devices
    • Problems Solved:**
  • Improves insertion loss performance of antenna switches
  • Enhances overall efficiency of wireless communication systems
    • Benefits:**
  • Better signal transmission quality
  • Increased reliability of antenna switches
  • Improved performance of electronic devices


Original Abstract Submitted

Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.

Retrieved from "http://wikipatents.org/index.php?title=18387801._DEVICES_AND_METHODS_FOR_ENHANCING_INSERTION_LOSS_PERFORMNCE_OF_AN_ANTENNA_SWITCH_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=36837"