18481433. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Seungheon Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18481433 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The method described in the abstract involves manufacturing a semiconductor device by forming a mask layer on a semiconductor structure with gate lines and intergate insulating portions, creating an opening to expose a cut region of the gate lines, forming a separation hole by removing part of a gate capping layer, depositing a pyrolysis material pattern in the separation hole, and using an etch stop layer to remove the pyrolysis material pattern while decomposing it, followed by removing part of the gate electrode exposed by the separation hole.
- Formation of mask layer on semiconductor structure with gate lines and intergate insulating portions
- Creation of opening to expose gate lines
- Formation of separation hole by removing part of gate capping layer
- Deposition of pyrolysis material pattern in separation hole
- Use of etch stop layer to remove pyrolysis material pattern and decompose it
- Removal of part of gate electrode exposed by separation hole
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, memory chips, and microprocessors.
Problems Solved
This method helps in improving the precision and efficiency of semiconductor device manufacturing processes by enabling accurate removal of specific layers and materials.
Benefits
The use of this method can lead to enhanced performance and reliability of semiconductor devices, as well as potentially reducing production costs and increasing overall yield.
Potential Commercial Applications
The technology can be utilized in the semiconductor industry for the production of advanced electronic components, offering a competitive edge in the market.
Possible Prior Art
One possible prior art could be the use of similar etch stop layers in semiconductor manufacturing processes to control material removal and deposition.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing techniques?
This article does not provide a direct comparison between this method and traditional techniques in terms of efficiency, cost-effectiveness, or performance improvements.
What are the specific materials used in the pyrolysis material pattern, and how do they affect the overall device performance?
The article does not delve into the details of the specific materials used in the pyrolysis material pattern and their impact on the semiconductor device's functionality or characteristics.
Original Abstract Submitted
A method of manufacturing a semiconductor device, includes forming a mask layer on a semiconductor structure having a plurality of gate lines and a plurality of intergate insulating portions, forming an opening that exposes a cut region of the plurality of gate lines in the mask layer, forming a separation hole by removing a portion of a gate capping layer exposed by the opening, forming a pyrolysis material pattern in the separation hole, forming an etch stop layer on an upper surface of the mask layer and on a side wall portion of the separation hole from which the pyrolysis material pattern is removed, while the pyrolysis material pattern is decomposed and removed, and removing a portion of the gate electrode exposed by the separation hole using the etch stop layer.
