Intel corporation (20240120335). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract
Contents
- 1 GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL
Organization Name
Inventor(s)
Sudipto Naskar of Portland OR (US)
Biswajeet Guha of Hillsboro OR (US)
William Hsu of Hillsboro OR (US)
Bruce Beattie of Portland OR (US)
Tahir Ghani of Portland OR (US)
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120335 titled 'GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL
Simplified Explanation
The abstract describes gate-all-around integrated circuit structures fabricated using alternate etch selective material, resulting in a vertical arrangement of horizontal nanowires with a gate stack, dielectric spacers, and metal oxide material.
- Vertical arrangement of horizontal nanowires
- Gate stack over the nanowires
- Dielectric spacers on sides of gate stack
- Metal oxide material between nanowires and spacers
Potential Applications
The technology could be applied in advanced semiconductor devices, high-performance computing, and nanoelectronics.
Problems Solved
This technology addresses the need for higher performance and efficiency in integrated circuits, especially in the context of shrinking transistor sizes.
Benefits
The gate-all-around structure offers improved control over the flow of current, leading to enhanced performance and reduced power consumption in electronic devices.
Potential Commercial Applications
The technology could be utilized in the development of next-generation processors, memory devices, and sensors for various industries.
Possible Prior Art
Prior art may include similar structures using different materials or fabrication techniques, such as traditional planar transistors or FinFETs.
Unanswered Questions
How does this technology compare to existing transistor structures in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing transistor structures.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the scalability or manufacturing challenges of implementing this technology on a large scale.
Original Abstract Submitted
gate-all-around integrated circuit structures fabricated using alternate etch selective material, and the resulting structures, are described. for example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. a gate stack is over the vertical arrangement of horizontal nanowires. a pair of dielectric spacers is along sides of the gate stack and over the vertical arrangement of horizontal nanowires. a metal oxide material is between adjacent ones of the vertical arrangement of horizontal nanowires at a location between the pair of dielectric spacers and the sides of the gate stack.
