17837925. INTEGRATED STANDARD CELL STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

INTEGRATED STANDARD CELL STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shih-Hsien Huang of Yilan County (TW)

Cheng-Hua Liu of Hsinchu County (TW)

Kuang-Hung Chang of Hsinchu (TW)

Sheng-Hsiung Wang of Hsinchu County (TW)

Chun-Yen Lin of Hsinchu (TW)

TUNG-HENG Hsieh of Hsinchu County (TW)

BAO-RU Young of Hsinchu County (TW)

INTEGRATED STANDARD CELL STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17837925 titled 'INTEGRATED STANDARD CELL STRUCTURE

Simplified Explanation

The abstract describes an integrated circuit (IC) structure that includes a fin structure protruding from a semiconductor substrate. The fin structure has three portions with different widths and extends in a specific direction. The IC structure also includes standard cells with metal gate stacks engaged with different portions of the fin structure, and a filler cell that connects the standard cells.

• The IC structure includes a fin structure with different width portions and a continuous third portion.
• Standard cells with metal gate stacks are engaged with different portions of the fin structure.
• A filler cell is present between the standard cells and includes the continuous third portion of the fin structure.
• The filler cell is defined by a dielectric gate and a third metal gate stack with a one-pitch spacing.

Potential Applications

• This IC structure can be used in various electronic devices such as smartphones, computers, and IoT devices.
• It can be applied in the manufacturing of high-performance processors and memory chips.

Problems Solved

• The integrated circuit structure solves the problem of efficiently utilizing space on a semiconductor substrate.
• It addresses the challenge of connecting standard cells with different widths of the fin structure.

Benefits

• The IC structure allows for compact and efficient integration of standard cells with different widths.
• It enables improved performance and functionality of electronic devices.
• The design provides better utilization of space on a semiconductor substrate.

Original Abstract Submitted

An integrated circuit (IC) structure includes a fin structure protruding from a semiconductor substrate, the fin structure including a first portion having a first width, a second portion having a second width that is different from the first width, and a third portion extending continuously along a first direction over the semiconductor substrate, the first width and the second width being measured along a second direction perpendicular to the first direction. The IC structure also includes a first standard cell including a first metal gate stack engaged with the first portion, a second standard cell including a second metal gate stack engaged with the second portion, and a filler cell disposed between the first standard cell and the second standard cell, where the filler cell includes the third portion that connects the first portion to the second portion. The IC further includes a dielectric gate defining a first boundary of the filler cell and a third metal gate stack defining a second boundary of the filler cell, where the dielectric gate and the third metal gate stack are separated by a one-pitch spacing.