18206187. PROCESS OF FORMING SILICON-CONTAINING FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

PROCESS OF FORMING SILICON-CONTAINING FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jihyun Lee of Suwon-si (KR)

Sunggi Kim of Daedeok-gu (KR)

Yujin Cho of Daedeok-gu (KR)

Sunhye Hwang of Suwon-si (KR)

Seung Son of Daedeok-gu (KR)

Gyunsang Lee of Daedeok-gu (KR)

Younjoung Cho of Suwon-si (KR)

Byungkeun Hwang of Suwon-si (KR)

PROCESS OF FORMING SILICON-CONTAINING FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18206187 titled 'PROCESS OF FORMING SILICON-CONTAINING FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

Simplified Explanation

The abstract of the patent application describes a silicon compound and its use in depositing a silicon-containing film for manufacturing integrated circuit devices.

  • The patent application is for a silicon compound represented by Chemical Formula (1).
  • The compound is used in a composition for depositing a silicon-containing film.
  • The process described in the patent application involves forming a silicon-containing film using the composition.
  • The method of manufacturing an integrated circuit device utilizes the silicon compound and the process of forming the silicon-containing film.

Potential Applications

  • Manufacturing of integrated circuit devices
  • Semiconductor industry

Problems Solved

  • Providing a silicon compound for depositing a silicon-containing film
  • Improving the process of forming silicon-containing films
  • Enhancing the manufacturing of integrated circuit devices

Benefits

  • Improved efficiency in depositing silicon-containing films
  • Enhanced performance of integrated circuit devices
  • Cost-effective manufacturing process


Original Abstract Submitted

A silicon compound, a composition for depositing a silicon-containing film, a process of forming a silicon-containing film, and a method of manufacturing an integrated circuit device, the silicon compound is represented by Chemical Formula (1):

Retrieved from "http://wikipatents.org/index.php?title=18206187._PROCESS_OF_FORMING_SILICON-CONTAINING_FILM_AND_METHOD_OF_MANUFACTURING_INTEGRATED_CIRCUIT_DEVICE_USING_THE_SAME_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=16787"