17461618. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shih-Yao Lin of New Taipei City (TW)

Chieh-Ning Feng of Taichung City (TW)

Hsiao Wen Lee of Hsinchu City (TW)

Ming-Ching Chang of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17461618 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a method for forming a dielectric fin between two semiconductor fins on a substrate. A dummy gate structure is formed over the semiconductor fins, and upper sidewall portions of the dielectric fin are removed. The dummy gate structure is then replaced with active gate structures.

• Method for forming a dielectric fin between semiconductor fins on a substrate
• Formation of a dummy gate structure over the semiconductor fins
• Removal of upper sidewall portions of the dielectric fin
• Replacement of the dummy gate structure with active gate structures

Potential Applications

• Semiconductor manufacturing
• Integrated circuit fabrication
• Transistor design and production

Problems Solved

• Efficient formation of dielectric fins between semiconductor fins
• Precise placement and replacement of gate structures
• Improved transistor performance and functionality

Benefits

• Enhanced transistor performance
• Increased integration density
• Improved power efficiency
• Simplified manufacturing process

Original Abstract Submitted

A method includes forming a dielectric fin over a substrate between a first semiconductor fin and a second semiconductor fin. The first and second semiconductor fins, and the dielectric fin all extend along a first lateral direction. The method includes forming a dummy gate structure that extends along a second lateral direction and includes a first portion and a second portion. The first and second portions overlay the first and second semiconductor fins, respectively, and separate from each other with the dielectric fin. The method includes removing upper sidewall portions of the dielectric fin. The method includes replacing the first and second portions of the dummy gate structure with a first and second active gate structures, respectively.