18095080. SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE STRUCTURES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE STRUCTURES
Organization Name
Inventor(s)
Heonjong Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18095080 titled 'SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE STRUCTURES
Simplified Explanation
The patent application describes a semiconductor device and its fabrication methods. The device includes a dielectric structure, first conductive structures, and second conductive structures. The dielectric structure consists of two layers, with the first layer surrounding the first conductive structures and the second layer surrounding the second conductive structures.
- The first dielectric layer has a first intervention between the first conductive structures, while the second dielectric layer has a second intervention between the second conductive structures.
- The width of the first intervention decreases in a second direction from the top surface to the bottom surface, while the width of the second intervention increases in the same direction.
- The first and second dielectric layers are made of different dielectric materials.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit fabrication
Problems solved by this technology:
- Improved performance and efficiency of semiconductor devices
- Enhanced electrical isolation between conductive structures
Benefits of this technology:
- Better control over the width of interventions in the dielectric structure
- Increased flexibility in designing and fabricating semiconductor devices
- Improved functionality and reliability of the devices
Original Abstract Submitted
Semiconductor devices and fabrication methods thereof. For example, a semiconductor device may include a dielectric structure, and first conductive structures and second conductive structures. The dielectric structure may include a first dielectric layer that surrounds the first conductive structures and a second dielectric layer that surrounds the second conductive structures. The first dielectric layer may include a first intervention between the first conductive structures. The second dielectric layer may include a second intervention between the second conductive structures. A width in a first direction of the first intervention may decrease in a second direction from a top surface toward a bottom surface of the first intervention. A width in the first direction of the second intervention may increase in the second direction from a top surface toward a bottom surface of the second intervention. The first dielectric layer and the second dielectric layer may include different dielectric materials.
