18199541. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kwangjin Moon of Suwon-si (KR)
Hyungjun Jeon of Suwon-si (KR)
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18199541 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes an integrated circuit semiconductor device that includes a substrate with two surfaces, a power via penetrating between the surfaces, a cell part with individual elements of different thicknesses inside the substrate, a recess between the elements, a signal wiring part on the first surface connected to the power via, a power transmission network part under the second surface connected to the power via, and an external connection terminal under the power transmission network part connected to a lower multilayer wiring layer.
- The device includes a substrate with two surfaces and a power via that penetrates between the surfaces.
- Inside the substrate, there is a cell part with individual elements of different thicknesses and a recess positioned between the elements.
- On the first surface of the substrate, there is a signal wiring part that includes an upper multilayer wiring layer connected to the power via.
- Under the second surface of the substrate, there is a power transmission network part that includes a lower multilayer wiring layer connected to the power via.
- An external connection terminal is located under the power transmission network part and connected to the lower multilayer wiring layer.
- The substrate has multiple regions with different thicknesses.
Potential applications of this technology:
- Integrated circuit semiconductor devices with improved power transmission and signal wiring capabilities.
- Devices that require efficient power distribution and signal transmission within a compact space.
- Electronics that need to accommodate different thicknesses of individual elements.
Problems solved by this technology:
- Efficient power distribution and signal transmission in integrated circuit semiconductor devices.
- Accommodating different thicknesses of individual elements within a substrate.
- Providing a recess between individual elements for improved performance.
Benefits of this technology:
- Enhanced power transmission and signal wiring capabilities.
- Improved integration and compactness of electronic devices.
- Better performance and reliability due to optimized power distribution and signal transmission.
Original Abstract Submitted
An integrated circuit semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface; a power via penetrating between the first surface and the second surface of the substrate; a cell part including a plurality of individual elements having different thicknesses inside the substrate, and a recess positioned between the individual elements; a signal wiring part on the first surface of the substrate and including an upper multilayer wiring layer connected to the power via; a power transmission network part under the second surface of the substrate and including a lower multilayer wiring layer connected to the power via; and an external connection terminal under the power transmission network part and connected to the lower multilayer wiring layer, wherein the substrate includes a plurality of regions having different thicknesses.
