18401833. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Semiconductor Device and Method
Semiconductor Device and Method
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Semiconductor Device and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18401833 titled 'Semiconductor Device and Method
Simplified Explanation
The abstract describes improved inner spacers for semiconductor devices, including a first inner spacer layer with silicon and nitrogen, and a second inner spacer layer with silicon, oxygen, and nitrogen, having a lower dielectric constant than the first layer.
- The first inner spacer layer contacts the gate structure and the source/drain region, while the second inner spacer layer contacts the first inner spacer layer and the source/drain region.
- The second inner spacer layer has a lower dielectric constant than the first inner spacer layer.
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, particularly in improving the performance and efficiency of these devices.
Problems Solved
This innovation addresses the need for improved inner spacers in semiconductor devices to enhance their functionality and overall performance.
Benefits
The use of these inner spacers can lead to better control of the electrical properties within the semiconductor device, resulting in increased efficiency and reliability.
Potential Commercial Applications
The technology could find applications in the semiconductor industry for the production of high-performance electronic devices, such as processors and memory chips.
Possible Prior Art
One possible prior art could be the use of conventional inner spacers in semiconductor devices, which may not offer the same level of performance and efficiency as the improved inner spacers described in this patent application.
Unanswered Questions
How does the technology impact the overall cost of manufacturing semiconductor devices?
The abstract does not provide information on how the use of these improved inner spacers may affect the cost of production. Further details on the economic implications of implementing this technology would be beneficial for potential adopters.
Are there any limitations or drawbacks associated with the use of these inner spacers?
The abstract does not mention any potential limitations or drawbacks of the technology. Understanding any challenges or restrictions in utilizing these inner spacers would be important for manufacturers considering their adoption.
Original Abstract Submitted
Improved inner spacers for semiconductor devices and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a substrate; a plurality of semiconductor channel structures over the substrate; a gate structure over the semiconductor channel structures, the gate structure extending between adjacent ones of the semiconductor channel structures; a source/drain region adjacent of the gate structure, the source/drain region contacting the semiconductor channel structures; and an inner spacer interposed between the source/drain region and the gate structure, the inner spacer including a first inner spacer layer contacting the gate structure and the source/drain region, the first inner spacer layer including silicon and nitrogen; and a second inner spacer layer contacting the first inner spacer layer and the source/drain region, the second inner spacer layer including silicon, oxygen, and nitrogen, the second inner spacer layer having a lower dielectric constant than the first inner spacer layer.
