Intel corporation (20240113105). FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract
Contents
- 1 FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the technology impact the overall performance of semiconductor devices?
- 1.11 What are the specific semiconductor applications that could benefit most from this technology?
- 1.12 Original Abstract Submitted
FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL
Organization Name
Inventor(s)
Alison V. Davis of Portland OR (US)
Bern Youngblood of Hillsboro OR (US)
Reza Bayati of Portland OR (US)
Swapnadip Ghosh of Hillsboro OR (US)
Matthew J. Prince of Portland OR (US)
Jeffrey Miles Tan of Hillsboro OR (US)
FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113105 titled 'FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL
Simplified Explanation
The patent application describes techniques for forming semiconductor devices with gate cuts of different widths but similar heights. This is achieved by using different etching processes for gate cuts of varying widths while maintaining a consistent height.
- Gate cuts with different widths but similar heights
- Different etching processes used for gate cuts of varying widths
- Consistent height maintained across gate cuts
- Gate cuts extend through entire thickness of gate structure
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
1. Ensures uniformity in gate cut height across different widths 2. Allows for precise control over gate structure dimensions
Benefits
1. Improved performance and reliability of semiconductor devices 2. Enhanced manufacturing flexibility and efficiency
Potential Commercial Applications
Optimizing semiconductor manufacturing processes for increased yield and performance.
Possible Prior Art
There may be prior art related to semiconductor device fabrication techniques involving gate cuts of varying widths but similar heights. Further research is needed to identify specific examples.
Unanswered Questions
How does the technology impact the overall performance of semiconductor devices?
The technology described in the patent application could potentially improve the performance of semiconductor devices by ensuring consistent gate cut dimensions.
What are the specific semiconductor applications that could benefit most from this technology?
The technology could be particularly beneficial in high-performance computing, telecommunications, and consumer electronics industries where precise control over gate structure dimensions is crucial for device performance.
Original Abstract Submitted
techniques are provided herein to form semiconductor devices that include gate cuts with different widths (e.g., at least a 1.5� difference in width) but substantially the same height (e.g., less than 5 nm difference in height). a given gate structure extending over one or more semiconductor regions may be interrupted with any number of gate cuts that each extend through an entire thickness of the gate structure. according to some embodiments, gate cuts of a similar first width are formed via a first etching process while gate cuts of a similar second width that is greater than the first width are formed via a second etching process that is different from the first etching process. using different etch processes for gate cuts of different widths maintains a similar height for the gate cuts of different widths.
