17894169. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chen-Huang Huang of Chiayi County (TW)
An Chyi Wei of Hsin-Chu City (TW)
Ryan Chia-Jen Chen of Hsinchu (TW)
Hsuan-Chih Wu of Taoyuan City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17894169 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor device structure described in the patent application includes:
- Semiconductor substrate
- Semiconductor channel sheets over the substrate
- Source and drain regions next to the semiconductor channel sheets
- Gate structure between the source and drain regions, surrounding the semiconductor channel sheets
- Top gate electrode structure above the semiconductor channel sheets
- Lower gate electrode structures between the semiconductor channel sheets
- Sidewall spacers between the gate structure and the source and drain regions, with slant sidewalls next to the top gate electrode structure
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- Potential Applications
This technology can be applied in:
- Semiconductor manufacturing industry
- Integrated circuit design
- Electronics industry
- Problems Solved
This technology addresses issues such as:
- Enhancing performance of semiconductor devices
- Improving efficiency of electronic components
- Increasing reliability of integrated circuits
- Benefits
The benefits of this technology include:
- Higher performance levels in semiconductor devices
- Enhanced efficiency in electronic systems
- Improved reliability and longevity of integrated circuits
Original Abstract Submitted
A semiconductor device structure and a manufacturing method thereof are provided. The semiconductor device structure includes a semiconductor substrate, semiconductor channel sheets disposed over the semiconductor substrate, and source and drain regions located beside the semiconductor channel sheets. A gate structure is disposed between the source and drain regions and disposed over the semiconductor channel sheets. The gate structure laterally surrounds the semiconductor channel sheets. The gate structure includes a top gate electrode structure disposed above the semiconductor channel sheets, and lower gate electrode structures disposed between the semiconductor channel sheets. Sidewall spacers are disposed between the gate structure and source and drain regions, and the sidewall spacers located next to the top gate electrode structure have slant sidewalls.
