18491470. METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS
Organization Name
Inventor(s)
Min-Chul Sun of Yongin-si (KR)
Myeong-Cheol Kim of Suwon-si (KR)
Kyoung-Sub Shin of Seongnam-si (KR)
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18491470 titled 'METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device. It involves the formation of first to third active fins on a substrate, where each fin extends in a first direction. The second active fin, first active fin, and third active fin are arranged in a second direction that crosses the first direction. The second active fin is removed using a first etching mask, and the third active fin is removed using a second etching mask. A first gate structure is formed on the first active fin, and a first source/drain layer is formed on a portion of the first active fin adjacent to the first gate structure.
- The method involves forming active fins on a substrate and arranging them in a specific order.
- Etching masks are used to selectively remove specific active fins.
- A gate structure and a source/drain layer are formed on the remaining active fin.
Potential applications of this technology:
- Semiconductor devices such as transistors and integrated circuits.
- Electronics industry for various electronic devices.
Problems solved by this technology:
- Efficient manufacturing of semiconductor devices with precise control over active fin arrangement.
- Selective removal of specific active fins without affecting others.
Benefits of this technology:
- Improved performance and functionality of semiconductor devices.
- Enhanced manufacturing efficiency and yield.
- Enables the production of smaller and more compact electronic devices.
Original Abstract Submitted
In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.
