17744061. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

Semiconductor Device and Method

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Wan-Yi Kao of Baoshan Township (TW)

Fang-Yi Liao of New Taipei City (TW)

Shu Ling Liao of Taichung City (TW)

Yen-Chun Huang of New Taipei City (TW)

Che-Hao Chang of Hsinchu (TW)

Yung-Cheng Lu of Hsinchu (TW)

Chi On Chui of Hsinchu (TW)

Semiconductor Device and Method - A simplified explanation of the abstract

This abstract first appeared for US patent application 17744061 titled 'Semiconductor Device and Method

Simplified Explanation

The patent application describes semiconductor devices with fin-shaped isolation structures and methods for their formation. Here are the key points:

• The semiconductor device includes a fin that extends from a semiconductor substrate.
• A shallow trench isolation (STI) region is present over the semiconductor substrate, adjacent to the fin.
• A dielectric fin structure is formed over the STI region, extending parallel to the fin.
• The dielectric fin structure consists of a first liner layer in contact with the STI region.
• A first fill material is present over the first liner layer, with a seam located in the lower portion of the fill material, separate from the top surface.
• The lower portion of the first fill material has a higher carbon concentration compared to the upper portion.

Potential applications of this technology:

• Semiconductor manufacturing industry
• Integrated circuit fabrication
• Electronic devices and systems

Problems solved by this technology:

• Improved isolation of semiconductor devices
• Enhanced performance and reliability of integrated circuits
• Reduction of leakage currents and parasitic capacitance

Benefits of this technology:

• Increased efficiency and functionality of semiconductor devices
• Enhanced performance and reliability of electronic systems
• Reduction in power consumption and heat generation

Original Abstract Submitted

Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.