18306716. Isolation Regions For Isolating Transistors and the Methods Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Isolation Regions For Isolating Transistors and the Methods Forming the Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Isolation Regions For Isolating Transistors and the Methods Forming the Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this method compare to traditional deposition techniques for silicon oxide layers in terms of efficiency and reliability?
- 1.9.3 What are the specific parameters and conditions required for the treatment process using nitrogen and hydrogen to be effective in depositing the silicon oxide layer?
- 1.10 Original Abstract Submitted
Isolation Regions For Isolating Transistors and the Methods Forming the Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wan Chen Hsieh of Hsinchu (TW)
Chia-Hui Lin of Dajia Township (TW)
Isolation Regions For Isolating Transistors and the Methods Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18306716 titled 'Isolation Regions For Isolating Transistors and the Methods Forming the Same
Simplified Explanation
The method described in the abstract involves etching a gate stack in a wafer, depositing a silicon nitride liner extending into the trench, and depositing a silicon oxide layer. The process of depositing the silicon oxide layer includes performing a treatment process on the wafer using a process gas including nitrogen and hydrogen, and performing a soaking process on the wafer using a silicon precursor.
- Etching of gate stack in wafer
- Deposition of silicon nitride liner
- Deposition of silicon oxide layer
- Treatment process with nitrogen and hydrogen
- Soaking process with silicon precursor
Potential Applications
This technology can be applied in the semiconductor industry for the fabrication of advanced integrated circuits.
Problems Solved
This technology helps in improving the performance and reliability of semiconductor devices by enhancing the gate stack structure.
Benefits
The method provides a more efficient and reliable way to deposit silicon oxide layers in semiconductor manufacturing processes.
Potential Commercial Applications
- Advanced semiconductor manufacturing
- Integrated circuit fabrication
Possible Prior Art
One possible prior art could be the use of different deposition techniques for silicon oxide layers in semiconductor processing.
Unanswered Questions
How does this method compare to traditional deposition techniques for silicon oxide layers in terms of efficiency and reliability?
This article does not provide a direct comparison between this method and traditional deposition techniques. Further research or testing would be needed to determine the specific advantages of this method over traditional techniques.
What are the specific parameters and conditions required for the treatment process using nitrogen and hydrogen to be effective in depositing the silicon oxide layer?
The article does not delve into the specific parameters and conditions for the treatment process. Additional information or experimentation may be necessary to optimize the process for different applications.
Original Abstract Submitted
A method includes etching a gate stack in a wafer to form a trench, depositing a silicon nitride liner extending into the trench, and depositing a silicon oxide layer. The process of depositing the silicon oxide layer includes performing a treatment process on the wafer using a process gas including nitrogen and hydrogen, and performing a soaking process on the wafer using a silicon precursor.
