18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ji-Cheng Chen of Hsinchu City (TW)
Ching-Hwanq Su of Tainan City (TW)
Kuan-Ting Liu of Hsinchu City (TW)
Shih-Hang Chiu of Taichung City (TW)
GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18518413 titled 'GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR
Simplified Explanation
The gate structure in this patent application consists of a metal layer, a barrier layer, and a work function layer. The barrier layer, which is a tri-layered structure, includes either fluorine and silicon or fluorine and aluminum, and it covers both the bottom surface and the sidewalls of the metal layer. The work function layer surrounds the barrier layer.
- Metal layer
- Barrier layer with fluorine and silicon or fluorine and aluminum
- Tri-layered structure
- Work function layer surrounding the barrier layer
Potential Applications
- Semiconductor devices - Integrated circuits - Transistors
Problems Solved
- Improved gate structure performance - Enhanced device reliability - Better control of electrical properties
Benefits
- Increased efficiency - Higher performance - Longer lifespan of devices
Original Abstract Submitted
A gate structure includes a metal layer, a barrier layer, and a work function layer. The barrier layer covers a bottom surface and sidewalls of the metal layer. The barrier layer includes fluorine and silicon, or fluorine and aluminum. The barrier layer is a tri-layered structure. The work function layer surrounds the barrier layer.
