18304527. THROUGH VIA WITH GUARD RING STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
THROUGH VIA WITH GUARD RING STRUCTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih Hsin Yang of Hsinchu County (TW)
Mao-Nan Wang of Kaohsiung City (TW)
THROUGH VIA WITH GUARD RING STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18304527 titled 'THROUGH VIA WITH GUARD RING STRUCTURE
Simplified Explanation
The abstract describes a method for forming semiconductor structures with active regions and interconnect structures including guard rings.
- Form active regions on a substrate
- Form an interconnect structure with dielectric layers and a guard ring
- Etch an opening through the interconnect structure and active regions
- Form a via structure within the opening surrounded by the guard ring
Potential Applications
- Semiconductor manufacturing
- Integrated circuit fabrication
Problems Solved
- Ensuring proper electrical connections in semiconductor devices
- Protecting active regions from damage during fabrication
Benefits
- Improved reliability of semiconductor devices
- Enhanced performance of integrated circuits
Original Abstract Submitted
Semiconductor structures and methods for forming the same are provided. A method according to the present disclosure includes forming active regions on a substrate, forming an interconnect structure over the active regions, the interconnect structure including a plurality of dielectric layers and a guard ring disposed within the dielectric layers, etching an opening through the interconnect structure and at least a first portion of the active regions, the opening extending into the substrate, and forming a via structure within the opening. The via structure is surrounded by the guard ring when viewed along a direction perpendicular to a top surface of the substrate.
