Intel corporation (20240105718). INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS
Organization Name
Inventor(s)
Minwoo Jang of Portland OR (US)
Yanbin Luo of Portland OR (US)
Feng Zhang of Hillsboro OR (US)
Ting-Hsiang Hung of Beaverton OR (US)
Chia-Ching Lin of Portland OR (US)
INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105718 titled 'INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS
Simplified Explanation
The patent application describes methods for fabricating an integrated circuit (IC) device with a protection liner between doped semiconductor regions. The IC device includes a channel material with doped regions and an insulator structure between them, with a liner material on the sidewalls of the first portion of the insulator structure.
- The IC device includes a channel material with doped regions and an insulator structure between them.
- The insulator structure has a liner material on the sidewalls of the first portion but is absent on the sidewalls of the second portion.
Potential Applications
This technology could be applied in the manufacturing of advanced integrated circuits, particularly in the development of high-performance electronic devices.
Problems Solved
This technology helps to protect doped semiconductor regions within an IC device, preventing unwanted interactions and improving the overall performance and reliability of the device.
Benefits
- Enhanced protection for doped semiconductor regions - Improved performance and reliability of the IC device - Potential for increased efficiency in electronic devices
Potential Commercial Applications
"Advanced Integrated Circuit Fabrication Techniques for Enhanced Protection of Doped Regions"
Possible Prior Art
There may be prior art related to the use of liners in semiconductor fabrication processes to protect doped regions within IC devices.
Unanswered Questions
How does this technology compare to existing methods for protecting doped semiconductor regions in IC devices?
The article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages of this new approach.
What are the specific materials and processes used in the fabrication of the insulator structure with the protection liner?
The article does not delve into the details of the materials and processes involved, leaving room for further exploration into the technical aspects of the innovation.
Original Abstract Submitted
methods for fabricating an integrated circuit (ic) device with a protection liner between doped semiconductor regions are provided. an example ic device includes a channel material having a first face and a second face opposite the first face, a first doped region and a second doped region in the channel material, extending from the second face towards the first face by a first distance; and an insulator structure in a portion of the channel material between the first and second doped regions, the insulator structure extending from the second face towards the first face by a second distance greater than the first distance. the insulator structure includes a first portion between the second face and the first distance and a second portion between first distance and the second distance. the insulator structure includes a liner material on sidewalls of the first portion but absent on sidewalls of the second portion.
