18516595. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP simplified abstract (Intel Corporation)

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP

Organization Name

Intel Corporation

Inventor(s)

Szuya S. Liao of Portland OR (US)

Scott B. Clendenning of Portland OR (US)

Jessica Torres of Portland OR (US)

Lukas Baumgartel of Portland OR (US)

Kiran Chikkadi of Hillsboro OR (US)

Diane Lancaster of Hillsboro OR (US)

Matthew V. Metz of Portland OR (US)

Florian Gstrein of Portland OR (US)

Martin M. Mitan of Beaverton OR (US)

Rami Hourani of Beaverton OR (US)

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP - A simplified explanation of the abstract

This abstract first appeared for US patent application 18516595 titled 'SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP

Simplified Explanation

The abstract describes a patent application for self-aligned gate endcap (SAGE) architectures without fin end gaps in integrated circuit structures.

• A semiconductor fin with a cut along its length is used.
• A gate endcap isolation structure is positioned parallel to the fin and spaced apart from it.
• The isolation structure also has a portion in contact with the semiconductor fin at the location of the cut.

Potential Applications

This technology could be applied in the manufacturing of advanced integrated circuits, particularly in the development of high-performance and energy-efficient electronic devices.

Problems Solved

1. Elimination of fin end gaps in self-aligned gate endcap architectures. 2. Improved performance and reliability of integrated circuits.

Benefits

1. Enhanced integration density. 2. Better control over gate structures. 3. Increased efficiency and performance of electronic devices.

Unanswered Questions

How does this technology compare to existing methods in terms of cost-effectiveness?

The article does not provide information on the cost implications of implementing this technology compared to traditional methods.

What are the potential challenges in scaling up this technology for mass production?

The article does not address the scalability challenges that may arise when applying this technology on a larger scale.

Original Abstract Submitted

Self-aligned gate endcap (SAGE) architectures without fin end gaps, and methods of fabricating self-aligned gate endcap (SAGE) architectures without fin end gaps, are described. In an example, an integrated circuit structure includes a semiconductor fin having a cut along a length of the semiconductor fin. A gate endcap isolation structure has a first portion parallel with the length of the semiconductor fin and is spaced apart from the semiconductor fin. The gate endcap isolation structure also has a second portion in a location of the cut of the semiconductor fin and in contact with the semiconductor fin.