17936952. FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract (Intel Corporation)
Contents
- 1 FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE
Organization Name
Inventor(s)
Sukru Yemenicioglu of Portland OR (US)
Leonard P. Guler of Hillsboro OR (US)
Tahir Ghani of Portland OR (US)
Xinning Wang of Hillsboro OR (US)
FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17936952 titled 'FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE
Simplified Explanation
The patent application describes techniques for forming semiconductor devices with a gate cut that acts as a dielectric spine in a forksheet arrangement with semiconductor bodies on either side. The gate structure includes a gate dielectric and a gate electrode that extends around each semiconductor body, with the dielectric spine interrupting the gate structure between the two devices.
- The gate cut in the semiconductor devices acts as a dielectric spine in a forksheet arrangement.
- The gate structure includes a gate dielectric and a gate electrode that extends around each semiconductor body.
- The dielectric spine interrupts the gate structure between the two devices.
Potential Applications
The technology described in the patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as in integrated circuits, sensors, and memory devices.
Problems Solved
This technology addresses the challenge of integrating gate structures with multiple semiconductor bodies in a compact and efficient manner, providing improved performance and functionality in semiconductor devices.
Benefits
The use of a gate cut as a dielectric spine in a forksheet arrangement allows for enhanced control and modulation of electrical properties in semiconductor devices, leading to increased efficiency and performance.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the development of next-generation electronic devices with improved functionality and performance.
Possible Prior Art
One possible prior art for this technology could be the use of gate structures in semiconductor devices, but the specific implementation of a gate cut as a dielectric spine in a forksheet arrangement may be a novel and innovative approach.
Unanswered Questions
== How does this technology compare to existing methods for integrating gate structures with semiconductor bodies? This article does not provide a direct comparison with existing methods for integrating gate structures with semiconductor bodies, so it is unclear how this technology differs or improves upon current practices.
== What are the potential challenges or limitations of implementing this technology in practical semiconductor device fabrication processes? The article does not address the potential challenges or limitations of implementing this technology in practical semiconductor device fabrication processes, leaving room for further exploration of these aspects.
Original Abstract Submitted
Techniques are provided to form semiconductor devices that include a gate cut that passes through a plurality of semiconductor bodies (e.g., nanoribbons or nanosheets) such that the gate cut acts as a dielectric spine in a forksheet arrangement with the semiconductor bodies on either side of the gate cut. In an example, two semiconductor devices in a forksheet arrangement include semiconductor bodies directly on either side of a dielectric spine. A gate structure includes a gate dielectric (e.g., high-k gate dielectric material) and a gate electrode (e.g., conductive material such as workfunction material and/or gate fill metal) that extends around each of the semiconductor bodies of both semiconductor devices. The dielectric spine interrupts the entire height of the gate structure between the two devices and includes dielectric material (e.g., low-k dielectric), and the gate dielectric of the gate structure is not present along sidewalls of the spine between adjacent bodies.
