18199014. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Kyung Hee Cho of Suwon-si (KR)

Seokhyeon Yoon of Suwon-si (KR)

Hyeongrae Kim of Suwon-si (KR)

Jeewoong Shin of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18199014 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes active patterns on PMOS regions, source/drain patterns, and channel patterns with different widths and germanium concentrations. Here are some key points to explain the innovation:

• The device has first and second active patterns on PMOS regions.
• Two first source/drain patterns are spaced apart on the first active pattern, with a first channel pattern in between.
• Two second source/drain patterns are spaced apart on the second active pattern, with a second channel pattern in between.
• The width of the first semiconductor patterns is greater than the width of the second semiconductor patterns.
• The source/drain patterns have semiconductor layers with different germanium concentrations.
• The number of semiconductor layers in the second source/drain patterns is greater than in the first source/drain patterns.

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1. 1. 1. Potential Applications

This technology could be applied in advanced semiconductor devices, such as high-performance integrated circuits and processors.

1. 1. 1. Problems Solved

This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the design of source/drain patterns and channel patterns.

1. 1. 1. Benefits

The benefits of this technology include enhanced device performance, increased speed, and reduced power consumption in semiconductor applications.

1. 1. 1. Potential Commercial Applications

This innovative semiconductor device design could find commercial applications in the semiconductor industry for manufacturing high-speed and energy-efficient electronic devices.

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1. 1. 1. Possible Prior Art

One possible prior art could be the use of different materials in source/drain patterns to enhance device performance. Another could be the optimization of channel patterns for improved transistor characteristics.

1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing semiconductor device designs?

This article does not provide a direct comparison to existing semiconductor device designs in terms of performance, efficiency, or manufacturing cost.

1. 1. 1. 1. What specific manufacturing processes are required to implement this technology?

The article does not detail the specific manufacturing processes needed to implement this semiconductor device design, such as lithography techniques or material deposition methods.

Original Abstract Submitted

A semiconductor device includes first and second active patterns on first and second PMOS regions, two first source/drain patterns spaced apart along a first direction on the first active pattern and a first channel pattern including first semiconductor patterns between the two first source/drain patterns, and two second source/drain patterns spaced apart along the first direction on the second active pattern and a second channel pattern including second semiconductor patterns between the two second source/drain patterns. A width in a second direction of the each of the first semiconductor patterns is greater than a width of each of the second semiconductor patterns. Each of the first and second source/drain patterns includes semiconductor layers having different germanium concentrations. A number of the semiconductor layers of each of the two second source/drain patterns is greater than a number of the semiconductor layers of each of the two first source/drain patterns.