Intel corporation (20240113111). INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT simplified abstract

INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT

Organization Name

intel corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Clifford Ong of Portland OR (US)

Sukru Yemenicioglu of Portland OR (US)

Tahir Ghani of Portland OR (US)

INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113111 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT

Simplified Explanation

The patent application describes integrated circuit structures with fin isolation regions recessed for gate contact. Here is a simplified explanation of the abstract:

• A vertical stack of horizontal nanowires is positioned over a first sub-fin.
• A gate structure is located over the vertical stack of horizontal nanowires and the first sub-fin.
• A dielectric structure is laterally spaced apart from the gate structure, positioned on a second sub-fin but not over a channel structure.
• A dielectric gate cut plug is placed between the gate structure and the dielectric structure.
• A recess is present in the dielectric structure and the dielectric gate cut plug.
• A conductive structure is within the recess, in lateral contact with a gate electrode of the gate structure.

1. 1. 1. Potential Applications:

- Advanced semiconductor devices - High-performance integrated circuits

1. 1. 1. Problems Solved:

- Improved gate contact in integrated circuit structures - Enhanced performance and efficiency of semiconductor devices

1. 1. 1. Benefits:

- Increased conductivity and efficiency - Better control over gate structures - Potential for higher speed and performance in integrated circuits

1. 1. 1. Potential Commercial Applications:
         1. Enhancing Gate Contact in Integrated Circuits

1. 1. 1. Possible Prior Art:

- Previous methods of gate contact in integrated circuits - Traditional semiconductor device structures

1. 1. 1. 1. Unanswered Questions:

1. 1. 1. How does this technology compare to existing methods of gate contact in integrated circuits?

The article does not provide a direct comparison to existing methods of gate contact in integrated circuits. Further research or a comparative analysis would be needed to address this question.

1. 1. 1. What specific materials are used in the conductive structure within the recess?

The article does not specify the exact materials used in the conductive structure within the recess. Additional information or experimentation would be required to determine the materials utilized in this aspect of the technology.

Original Abstract Submitted

integrated circuit structures having fin isolation regions recessed for gate contact are described. in an example, an integrated circuit structure includes a vertical stack of horizontal nanowires over a first sub-fin. a gate structure is over the vertical stack of horizontal nanowires and on the first sub-fin. a dielectric structure is laterally spaced apart from the gate structure. the dielectric structure is not over a channel structure but is on a second sub-fin. a dielectric gate cut plug is between the gate structure and the dielectric structure. a recess is in the dielectric structure and in the dielectric gate cut plug. a conductive structure is in the recess, the conductive structure in lateral contact with a gate electrode of the gate structure.