17461304. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Abstract
- 1.6 Patent/Innovation Explanation
- 1.7 Potential Applications
- 1.8 Problems Solved
- 1.9 Benefits
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Hsin-Yi Lee of Hsinchu City (TW)
Cheng-Lung Hung of Hsinchu City (TW)
Chi On Chui of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17461304 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
Abstract
A semiconductor device has been developed that includes source and drain regions, a channel region, and a gate structure. The gate structure consists of a gate dielectric, a work function metal layer containing iodine, and a fill metal.
Patent/Innovation Explanation
- The semiconductor device includes source and drain regions, a channel region, and a gate structure.
- The gate structure consists of a gate dielectric, a work function metal layer, and a fill metal.
- The work function metal layer contains iodine.
Potential Applications
- This technology can be used in the manufacturing of various semiconductor devices.
- It can be applied in the production of transistors, integrated circuits, and other electronic components.
Problems Solved
- The use of a work function metal layer containing iodine helps improve the performance and efficiency of the semiconductor device.
- It addresses the challenge of achieving optimal conductivity and control over the flow of electrical current.
Benefits
- The inclusion of a gate dielectric, work function metal layer, and fill metal enhances the functionality and reliability of the semiconductor device.
- The use of iodine in the work function metal layer provides improved electrical properties.
- This technology enables the production of more efficient and high-performance electronic devices.
Original Abstract Submitted
A semiconductor device includes source and drain regions, a channel region between the source and drain regions, and a gate structure over the channel region. The gate structure includes a gate dielectric over the channel region, a work function metal layer over the gate dielectric and comprising iodine, and a fill metal over the work function metal layer.
